SI7465DP Vishay, SI7465DP Datasheet - Page 3

• Manufacturer Part Number: SI7465DP
• Description: P-channel 60-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 73113
S-51566-Rev. B, 07-Nov-05
0.12
0.10
0.08
0.06
0.04
0.02
0.00
40
10
20
16
12
1
8
4
0
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
On-Resistance vs. Drain Current
= 5 A
5
10
= 30 V
V
V
SD
GS
Q
g
- Source-to-Drain Voltage (V)
= 4.5 V
0.4
I
- Total Gate Charge (nC)
10
D
T
- Drain Current (A)
Gate Charge
J
20
= 150
0.6
15
˚
C
30
0.8
20
V
GS
T
= 10 V
J
40
= 25
1.0
25
˚
C
New Product
1.2
50
30
1800
1500
1200
0.30
0.25
0.20
0.15
0.10
0.05
0.00
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
900
600
300
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 5 A
10
V
= 10 V
V
2
T
DS
GS
J
0
- Junction Temperature (
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
20
25
oss
Capacitance
4
C
iss
50
I
30
Vishay Siliconix
D
= 5 A
75
6
Si7465DP
40
˚
www.vishay.com
100
C)
8
50
125
150
10
60
3