SI7489DP Vishay, SI7489DP Datasheet - Page 4

• Manufacturer Part Number: SI7489DP
• Description: P-channel 100-v D-s Mosfet
• Manufacturer: Vishay

Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
40
10
1
- 50 - 25
0.00
Source-Drain Diode Forward Voltage
0.2
V
0
SD
T
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
25
0.4
J
= 150 °C
- Temperature (°C)
50
0.6
75
I
D
= 250
100
0.001
0.8
0.01
100
0.1
10
T
1
µA
0.1
J
125
= 25 °C
*Limited by
r
Safe Operating Area, Junction-to-Ambient
DS(on)
*V
1.0
GS
150
> minimum V
New Product
V
175
1.2
DS
1
- Drain-to-Source Voltage (V)
Single Pulse
T
A
GS
= 25 °C
at which r
10
DS(on)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
100
35
30
25
20
15
10
is specified
5
0
0.01
2
100 µs
1 ms
10 ms
100 ms
1 s
10 s
dc
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
3
1000
0.1
V
4
GS
- Gate-to-Source Voltage (V)
5
Time (sec)
1
6
S-71596-Rev. B, 30-Jul-07
Document Number: 73436
T
A
10
= 125 °C
7
T
I
A
D
8
= 25 °C
= 7.8 A
100
9
1000
10