SI7421DN Vishay, SI7421DN Datasheet - Page 3

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SI7421DN

Manufacturer Part Number
SI7421DN
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7421DN-T1-E3
Manufacturer:
TI
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SI7421DN-T1-GE3
Manufacturer:
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Quantity:
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Document Number: 72416
S-51129—Rev. C, 13-Jun-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
0.2
DS
= 9.8 A
On-Resistance vs. Drain Current
5
5
= 15 V
V
V
SD
GS
Q
T
0.4
g
J
= 4.5 V
I
− Source-to-Drain Voltage (V)
= 150_C
10
D
10
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
0.6
15
15
0.8
20
20
T
J
1.0
= 25_C
V
GS
25
25
= 10 V
1.2
30
30
1.4
2000
1600
1200
0.10
0.08
0.06
0.04
0.02
0.00
800
400
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
I
D
rss
−25
V
I
D
= 2.6 A
GS
= 9.8 A
5
V
V
2
= 10 V
GS
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
10
25
Capacitance
4
I
Vishay Siliconix
D
C
C
15
50
= 9.8 A
iss
oss
6
75
Si7421DN
20
100
www.vishay.com
8
25
125
150
10
30
3

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