SI7309DN Vishay, SI7309DN Datasheet

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SI7309DN

Manufacturer Part Number
SI7309DN
Description
P-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a.
b.
c.
d.
e.
f.
Document Number: 73434
S–51339—Rev. A, 25-Jul-05
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Width)
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: Si7309DN-T1—E3 (Lead (Pb)-Free)
V
Package Limited.
Surface Mounted on 1” x 1” FR4 Board.
t = 10 sec
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Maximum under steady state conditions is 81_C/W.
DS
–60
–60
(V)
0.146 @ V
0.115 @ V
r
8
DS(on)
3.30 mm
D
J
J
7
GS
= 150_C)
= 150_C)
GS
a, d
D
Parameter
Parameter
(W)
= –4.5 V
= –10 V
6
D
PowerPAK 1212-8
5
D
P-Channel 60-V (D-S) MOSFET
1
I
D
S
–8
–8
(A)
2
S
a
3
S
3.30 mm
Steady State
4
Q
L = 0 1 mH
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
G
C
C
A
A
C
A
C
C
A
A
14 5 nC
14.5 nC
g
New Product
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 25_C
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
_
D TrenchFETr Power MOSFET
D Low Thermal Resistance PowerPAKr Package
D CCFL inverter
D Class D–amp
Symbol
Symbol
T
R
R
J
with Small Size and Low 1.07 mm Profile
V
V
E
I
I
P
P
, T
DM
thJC
I
I
I
I
AS
thJA
DS
GS
D
D
AS
S
S
D
D
stg
Typical
31
5
G
–55 to 150
–3.9
–3.1
–2.7
Limit
3.2
2.1
P-Channel MOSFET
"20
–7.8
19.8
12.7
–60
–20
–15
–8
–8
11
b, c
b, c
a
b, c
b, c
a
b, c
Maximum
Vishay Siliconix
S
D
6.3
39
Si7309DN
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
V
A
A
1

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SI7309DN Summary of contents

Page 1

... V GS PowerPAK 1212-8 3. Ordering Information: Si7309DN-T1—E3 (Lead (Pb)-Free) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Width) Continuous Source Drain Diode Current Continuous Source-Drain Diode Current ...

Page 2

... Si7309DN Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic ...

Page 3

... Q – Total Gate Charge (nC) g Document Number: 73434 S–51339—Rev. A, 25-Jul-05 New Product thru Si7309DN Vishay Siliconix Transfer Characteristics 125_C C 25_C 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Capacitance ...

Page 4

... Si7309DN Vishay Siliconix Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 2.4 2.2 = 250 2.0 1.8 1.6 1.4 –50 – – Temperature (_C) J www.vishay.com 4 New Product 25_C J 1.0 1.2 1.4 100 125 150 Safe Operating Area 100 *r Limited DS(on 0.1 T ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73434 S–51339—Rev. A, 25-Jul-05 New Product 125 150 0.001 Si7309DN Vishay Siliconix Power De-Rating 100 125 T – Case Temperature (_C) C www.vishay.com 150 ...

Page 6

... Si7309DN Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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