SI7117DN Vishay, SI7117DN Datasheet - Page 3

• Manufacturer Part Number: SI7117DN
• Description: P-channel 150-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73478
S-51876—Rev. A, 12-Sep-05
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Parameter
_
Symbol
V
I
Q
SM
I
t
t
t
SD
S
rr
a
b
rr
New Product
I
I
F
= –0.5 A, di/dt = 100 A/ms, T
0 5 A di/dt
I
S
Test Condition
= –1.0 A, V
T
C
= 25_C
100 A/ms T
GS
= 0 V
J
= 25_C
25_C
Min
Vishay Siliconix
Typ
–0.7
42
90
35
7
Si7117DN
Max
–1.2
–12
–12
135
65
www.vishay.com
Unit
nC
ns
ns
ns
A
A
V
3