ARF521 Microsemi Corporation, ARF521 Datasheet - Page 2

• Manufacturer Part Number: ARF521
• Description: N-channel Enhancement Mode Power Mosfets
• Manufacturer: Microsemi Corporation

Dynamic Characteristics
Functional Characteristics
1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol
Symbol
G
C
t
C
C
t
d(ON)
d(off)
h
y
t
oss
t
PS
ISS
rss
r
f
30
25
20
15
10
25
20
15
10
5
0
0
0
V
Figure 3, Typical Transfer Characteristics
GS
V
Characteristic
Common Source Amplifi er Power Gain
Drain Effi ciency
Electrical Ruggedness VSWR 5:1
Figure 1, Typical Gain vs. Frequency
DS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
> I
T
25
J
D
= +125°C
(ON) x R
2
FREQUENCY (MHz)
50
DS
(ON)MAX.
4
T
75
J
T
= +25°C
J
= -55°C
6
100
T
P
V
J
out
= -55°C
Class AB
DD
= 150W
= 125V
8
125
150
10
Test Conditions
I
D
=I
I
V
dq
DD
R
V
V
f = 1MHz
D[Cont.]
V
= 50mA V
GS
G
DS
Test Conditions
GS
= 0.5V
= 1.6W
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
= 50V
P
= 15V
3000
1000
= 0V
f = 81MHz
OUT
@ 25°C
500
100
50
10
40
10
1
.5
.1
Figure 4, Typical Maximum Safe Operating Area
5
1
= 150W
DSS
.1
1
V
V
DS
DS
LIMITED BY R
DD
OPERATION HERE
T
T
SINGLE PULSE
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C
J
=+175°C
= 125V
=+25°C
DS
5
(ON)
1
10
Min
Min
14
50
No Degradation in Output Power
10
50 100
C
C
C
oss
Typ
780
125
Typ
rss
5.1
4.1
4.0
iss
12
15
55
7
100 200
500
Max
Max
900
150
10
10
18
100ms
100us
10ms
8
7
1ms
DC
ARF521
Unit
Unit
pF
dB
ns
%