RN4982AFS TOSHIBA Semiconductor CORPORATION, RN4982AFS Datasheet - Page 3

• Manufacturer Part Number: RN4982AFS
• Description: Toshiba Transistor Silicon Npn/pnp Epitaxial Type Pct Process Transistor With Built-in Bias Resistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Input resistor
Resistor ratio
Characteristic
Characteristic
Characteristic
(Ta = 25°C) (Q1)
(Ta =25°C) (Q2)
(Ta =25°C) (Q1, Q2 common)
V
V
Symbol
V
Symbol
V
Symbol
V
V
R1/R2
CE (sat)
CE (sat)
I
I
I
I
I
I (OFF)
I
I (OFF)
C
C
CBO
CEO
EBO
h
I (ON)
CBO
CEO
EBO
h
I (ON)
R1
FE
FE
ob
ob
V
V
V
V
I
V
V
V
V
V
V
V
I
V
V
V
C
C
CB
CE
EB
CE
CE
CE
CB
CB
CE
EB
CE
CE
CE
CB
= 5 mA, I
= −5 mA, I
3
= 50 V, I
= 50 V, I
= 10 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= −50 V, I
= −50 V, I
= −10 V, I
= −5 V, I
= −0.2 V, I
= −5 V, I
= −10 V, I
Test Condition
Test Condition
Test Condition
B
C
C
B
C
C
C
E
B
E
= 0.25 mA
C
= 10 mA
= 0.1 mA
E
B
C
E
= −0.25 mA
= 0
= 0
= 0
= 0, f = 1 MHz
C
= −10 mA
= −0.1 mA
= 5 mA
= 0
= 0
= 0
= 0, f = 1 MHz
⎯
⎯
= −5 mA
−0.41
0.41
−1.2
−0.8
Min
Min
Min
1.2
0.8
0.8
50
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
Typ.
Typ.
Typ.
0.7
0.9
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
RN4982AFS
2005-07-06
−0.63
−0.15
−100
−500
Max
0.63
0.15
Max
−2.6
−1.5
Max
100
500
2.6
1.5
1.2
12
⎯
⎯
⎯
⎯
Unit
Unit
Unit
mA
mA
kΩ
nA
pF
nA
pF
V
V
V
V
V
V