RN4911FE TOSHIBA Semiconductor CORPORATION, RN4911FE Datasheet

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RN4911FE

Manufacturer Part Number
RN4911FE
Description
Toshiba Transistor Silicon Pnp?npn Epitaxial Type Pct Process Bias Resistor Built-in Transistor
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Marking
R1: 10 kΩ
(Q1, Q2 common)
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
Q1
B
R1
V M
C
E
TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type
Q2
(PCT Process) (Bias Resistor Built-in Transistor)
B
R1
RN4911FE
C
E
1
Equivalent Circuit
Q1
6
1
Weight: 0003 g (typ.)
JEDEC
JEITA
TOSHIBA
5
2
(top view)
4
3
Q2
2-2N1G
RN4911FE
2004-07-01
Unit: mm

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RN4911FE Summary of contents

Page 1

... Equivalent Circuit and Bias Resistor Values R1: 10 kΩ (Q1, Q2 common) Marking V M RN4911FE Equivalent Circuit RN4911FE Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2N1G Weight: 0003 g (typ.) (top view 2004-07-01 ...

Page 2

... Note: Total rating Symbol Rating Unit − CBO − CEO − EBO −100 Symbol Rating Unit CBO CEO EBO I 100 mA C Symbol Rating Unit P (Note) 100 150 °C j −55~150 T °C stg 2 RN4911FE 2004-07-01 ...

Page 3

... (sat MHz Symbol Test Condition ⎯ RN4911FE Min Typ. Max Unit ⎯ ⎯ −100 nA ⎯ ⎯ −100 nA ⎯ 120 400 ⎯ −0.1 −0.3 V ⎯ ⎯ 200 MHz ⎯ ...

Page 4

... Q1 4 RN4911FE 2004-07-01 ...

Page 5

... Q2 5 RN4911FE 2004-07-01 ...

Page 6

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 RN4911FE 030619EAA 2004-07-01 ...

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