UMF5N ROHM Co. Ltd., UMF5N Datasheet - Page 2

• Manufacturer Part Number: UMF5N
• Description: Power Management Dual Transistors
• Manufacturer: ROHM Co. Ltd.

Transistors
! ! ! ! Absolute maximum ratings (Ta=25°C)
Tr1
DTr2
! ! ! ! Electrical characteristics (Ta=25°C)
Tr1
DTr2
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
∗1 Single pulse P
∗2 120mW per element must not be exceeded.
∗Characteristics of built-in transistor.
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Collector-base breakdown voltage
Transition frequency
Transition frequency
Each terminal mounted on a recommended land.
Each terminal mounted on a recommended land.
Parameter
Parameter
W
Parameter
Parameter
=1ms
Symbol
Symbol
V
V
V
Tstg
Tstg
V
V
I
P
P
Tj
I
Tj
CBO
CEO
EBO
I
I
CP
CC
O
C
C
IN
C
C
Symbol
Symbol
150(TOTAL)
150(TOTAL)
V
BV
BV
BV
R
V
−55~+150
−55~+150
V
V
Cob
I
I
I
CE(sat)
−10~+40
h
O(off)
CBO
EBO
O(on)
R
G
2
f
I(off)
I(on)
f
I
FE
/R
Limits
Limits
CEO
CBO
T
T
EBO
I
−500
1
−1.0
I
−15
−12
150
100
150
−6
50
30
1
Min.
Min.
32.9
−12
−15
270
3.0
0.8
−6
68
−
−
−
−
−
−
−
−
−
−
Unit
mW
Unit
mW
mA
mA
mA
°C
°C
°C
°C
V
V
V
A
V
V
∗1
∗2
∗1
∗2
−100
Typ.
Typ.
260
100
250
6.5
1.0
47
−
−
−
−
−
−
−
−
−
−
−
−100
−100
−250
Max.
Max.
61.1
680
300
180
500
0.5
1.2
−
−
−
−
−
−
−
−
MHz
MHz
Unit
Unit
mV
mV
nA
nA
pF
µA
nA
kΩ
V
V
V
V
−
V
−
−
I
I
I
V
V
I
V
V
V
V
V
V
V
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
CC
O
O
I
CC
O
CE
=−10µA
=−1mA
=−10µA
=−200mA, I
=5V
=0.3V, I
=10mA, I
=5V, I
=−6V
=−15V
=−2V, I
=−2V, I
=−10V, I
=5V, I
=50V, V
=10V, I
O
O
=5mA
O
C
E
=100µA
E
Conditions
Conditions
=2mA
=10mA, f=100MHz
I
I
=−5mA, f=100MHz
=−10mA
E
=0.5mA
=0V
=0mA, f=1MHz
B
=−10mA
−
−
UMF5N
∗
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