BST39-40 NXP Semiconductors, BST39-40 Datasheet - Page 3

• Manufacturer Part Number: BST39-40
• Description: Bst39; Bst40 Npn High-voltage Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
CHARACTERISTICS
T
2004 Dec 14
V
V
V
I
I
I
P
T
T
T
R
R
I
I
h
V
C
f
SYMBOL
C
CM
BM
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
th(j-a)
th(j-s)
c
NPN high-voltage transistors
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
collector capacitance
transition frequency
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BST39
BST40
BST39
BST40
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
E
C
C
C
E
C
= 0 A; V
= 0 A; V
= 20 mA; V
= 50 mA; I
= i
= 10 mA; V
open emitter
open base
open collector
T
e
amb
= 0 A; V
3
CB
EB
CONDITIONS
25 C; note 1
B
CONDITIONS
= 300 V
= 5 V
CE
CE
= 4 mA
CB
= 10 V
= 10 V; f = 100 MHz 70
= 10 V; f = 1 MHz
note 1
CONDITIONS
40
65
65
MIN.
MIN.
VALUE
96
16
BST39; BST40
Product specification
400
300
350
250
5
100
200
100
1.3
+150
150
+150
20
100
500
2
MAX.
MAX.
UNIT
K/W
K/W
V
V
V
V
V
mA
mA
mA
W
nA
nA
mV
pF
MHz
C
C
C
2
2
UNIT
UNIT
.
.