FMMT413A Diodes, Inc., FMMT413A Datasheet - Page 3

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FMMT413A

Manufacturer Part Number
FMMT413A
Description
Sot23 Npn Silicon Planar Avalanche Transistor
Manufacturer
Diodes, Inc.
Datasheet
Electrical characteristics (at T
Issue 3 - March 2006
© Zetex Semiconductors plc 2006
(*) Measured with a circuit possessing an approximate loop inductance of 12nH.
NOTES:
Parameter
Collector-base breakdown
voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Current in second
breakdown (pulsed)
Static forward current
transfer ratio
Collector-emitter
inductance
Transition frequency
Output capacitance
C
Symbol
BV
BV
BV
BV
I
I
V
V
I
h
L
f
CBO
EBO
USB
T
ce
FE
CE(sat)
BE(sat)
OBO
CBO
CES
CEO
EBO
amb
= 25°C unless otherwise stated)
Min.
150
150
50
22
25
50
6
3
Typ.
150
2.5
2
Max.
100
100
150
800
MHz I
Unit
mV
mV
nA
nA
nH
pF
A
A
V
V
V
V
I
I
I
V
V
I
I
V
V
I
V
leads
f = 20MHz
V
f = 1MHz
Conditions
I
I
Standard SOT23
C
C
E
C
B
C
B
C
C
CB
EB
C
C
CE
CB
= 100 A
= 100 A
= 10mA
= 10mA,
= 1mA
= 10mA,
= 1mA
= 10mA,
= 10mA, V
=110V, C
=130V, C
= 4V
= 10V
= 120V
= 10V, I
FMMT413
www.zetex.com
CE
CE
E
CE
=4.7nF
= 0,
=4.7nF
= 5V,
(*)
(*)

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