HVM187S Renesas Electronics Corporation., HVM187S Datasheet - Page 2

• Manufacturer Part Number: HVM187S
• Description: Silicon Epitaxial Planar Pin Diode For High Frequency Attenuator
• Manufacturer: Renesas Electronics Corporation.

HVM187S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Note:
Electrical Characteristics *
(Ta = 25°C)
Item
Reverse current
Forward voltage
Capacitance
Forward resistance
ESD-Capability *
Notes: 1. Per one device.
Rev.4.00, Oct.08.2003, page 2 of 4
1. Per one device.
2. Failure criterion ; I
２
Symbol
I
V
C
r
—
R
f
F
Pd *
Symbol
V
I
Tj
Tstg
F
R
R
≥ 100 nA at V
1
Min
—
—
—
3.5
200
1
Typ
—
—
—
—
—
R
= 60 V
Max
100
1.0
2.4
5.5
—
Unit
nA
V
pF
Ω
V
Value
60
50
100
125
−55 to +125
Test Condition
V
I
V
I
C = 200 pF, Both forward and Reverse
direction 1 pulse.
F
F
R
R
= 10 mA
= 10 mA, f = 100 MHz
= 60 V
= 0 V, f = 1 MHz
Unit
V
mA
mW
°C
°C