DF2S12FU TOSHIBA Semiconductor CORPORATION, DF2S12FU Datasheet
![no-image](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_sml.jpg)
DF2S12FU
Manufacturer Part Number
DF2S12FU
Description
Toshiba Diodes For Protecting Against Esd Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.DF2S12FU.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2S12FU
Manufacturer:
Toshiba
Quantity:
18 000
Diodes for Protecting Against ESD
Absolute Maximum Ratings
Electrical Characteristics
Marking
Guaranteed Level of ESD Immunity
Criterion: No damage to device elements
Two-pin ultra-small packages are suitable for higher mounting
densities.
Small total capacitance: C
Zener voltage correspond to E24 series.
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Power dissipation
Junction temperature
Storage temperature range
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
(contact discharge)
Test Condition
Characteristic
Characteristic
IEC61000-4-2
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
T
Equivalent Circuit
= 15pF (typ.)
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
DF2S12FU
ESD Immunity Level
Z
T
V
Z
C
I
T
P
stg
ZK
R
Z
Z
T
j
± 20 kV
Circuit
Test
―
―
―
―
―
−55~125
Rating
(Top View)
150
125
1
I
I
I
V
V
Z
Z
Z
R
R
= 5mA
= 5mA
= 0.5mA
= 9V
= 0V
Test Condition
Unit
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 4.5 mg
11.4
Min
―
―
―
―
Typ.
12.0
10
20
15
―
1-1E1A
DF2S12FU
―
―
2007-11-01
12.6
0.05
Max
―
―
―
Unit in mm
Unit
μA
pF
Ω
Ω
V
Related parts for DF2S12FU
DF2S12FU Summary of contents
Page 1
... I = 5mA ― 0.5mA ― ― (Top View) ESD Immunity Level ± DF2S12FU Unit in mm ― JEDEC JEITA ― 1-1E1A TOSHIBA Weight: 4.5 mg Min Typ. Max Unit 11.4 12.0 12.6 V ― 10 ― Ω ― 20 ― Ω ― ― ...
Page 2
... DF2S12FU 2007-11-01 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 DF2S12FU 20070701-EN GENERAL 2007-11-01 ...