DF2S6.8UFS TOSHIBA Semiconductor CORPORATION, DF2S6.8UFS Datasheet
DF2S6.8UFS
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DF2S6.8UFS Summary of contents
Page 1
... Symbol Test Condition V ― RWM 1mA RWM MHz 1m DF2S6.8UFS 0.6±0.05 Unit 0.2 ±0. °C °C fSC ― JEDEC ― JEITA 1-1L1A TOSHIBA Weight: 0.6 mg (typ.) Min Typ. Max ― ― 5.0 5.3 6.8 ― ...
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... Marking Pin Assignment (Top View) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) Criterion: No damage to device elements ±8kV 2 DF2S6.8UFS 2008-04-21 ...
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... I-V 10 Ta=25℃ Forward Side VR side 2 0 -30 -20 - -10 V [V] Voltage V (V) 2.5 2 Reverse Side VF side 1 0 DF2S6.8UFS C -V CT- f=1MHz Ta=25℃ [V] Reverse voltage V (V) R 2008-04-21 5 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 DF2S6.8UFS 20070701-EN GENERAL 2008-04-21 ...