BAS285 Vishay, BAS285 Datasheet - Page 2

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BAS285

Manufacturer Part Number
BAS285
Description
Small Signal Schottky Diode
Manufacturer
Vishay
Datasheet
BAS285
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Diode capacitance
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Figure 1. Max. Reverse Power Dissipation vs. Junction
Figure 2. Reverse Current vs. Junction Temperature
15822
15823
Parameter
1000
200
180
160
140
120
100
100
80
60
40
20
10
0
1
25
25
V
R
V
R
thJA
T
R
= 30 V
50
T
50
j
= V
j
= 540 kW
- Junction Temperature (°C)
- Junction Temperature (°C)
RRM
Temperature
75
75
at 80 % V
P
R
I
I
I
I
I
V
V
- Limit
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
100
100
= 25 V, t
= 1 V, f = 1 MHz
at 100 % V
P
R
R
- Limit
Test condition
125
125
p
R
= 300 µs
150
150
Symbol
C
V
V
V
V
V
I
R
F
F
F
F
F
D
Figure 4. Diode Capacitance vs. Reverse Voltage
15824
15825
Figure 3. Forward Current vs. Forward Voltage
1000
100
0.1
10
10
1
9
8
7
6
5
4
3
2
1
0
0.1
0
Min
V
V
F
R
- Forward Voltage (V)
- Reverse Voltage (V)
T
j
0.5
= 150 °C
1
Typ.
T
j
= 25 °C
1.0
10
Document Number 85501
f = 1 MHz
Max
240
320
400
500
800
2.3
10
Rev. 1.7, 17-Mar-06
100
1.5
Unit
mV
mV
mV
mV
mV
µA
pF

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