BAV99-V Vishay, BAV99-V Datasheet - Page 2

• Manufacturer Part Number: BAV99-V
• Description: Small Signal Switching Diode, Dual
• Manufacturer: Vishay

BAV99-V
Vishay Semiconductors
Thermal Characteristics
T
Electrical Characteristics
T
Typical Characteristics
T
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2
Junction ambient
Junction and storage
temperature range
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
14356
Figure 1. Forward Current vs. Forward Voltage
1000
0.01
100
0.1
Parameter
Parameter
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T
j
= 100 °C
V
F
- Forward Voltage (V)
on ceramic substrate
10 mm x 8 mm x 0.7 mm
I
I
I
I
V
V
V
V
I
V
25 °C
F
F
F
F
F
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 10 mA to I
= 70 V
= 70 V, T
= 25 V, T
= 0, f = 1 MHz
= 6 V, R
Test condition
Test condition
L
j
j
= 150 °C
= 150 °C
= 100 Ω
R
= 1 mA,
Symbol
C
V
V
V
V
I
I
I
t
R
R
R
rr
F
F
F
F
D
T
Symbol
j
R
= T
thJA
stg
Figure 2. Peak forward current I
Min
- 55 to + 150
Value
Typ.
430
Document Number 85718
Max
1.25
715
855
2.5
1.5
FM
50
30
1
6
Rev. 1.7, 09-Mar-06
= f (t
p
K/W
Unit
)
°C
Unit
mV
mV
µA
µA
µA
pF
ns
V
V