1N4448WS-V Vishay, 1N4448WS-V Datasheet

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1N4448WS-V

Manufacturer Part Number
1N4448WS-V
Description
Small Signal Fast Switching Diode
Manufacturer
Vishay
Datasheet
Small Signal Fast Switching Diode
Features
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
1)
Document Number 81387
Rev. 1.0, 04-Sep-06
• These diodes are also available in other
• Silicon Epitaxial Planar Diode
• Fast switching diodes
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
1N4448WS-V
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge forward current
Power dissipation
amb
Valid provided that electrodes are kept at ambient temperature.
case styles including the DO35 case
with the type designation 1N4448, the
MiniMELF case with the type designa-
tion LL4448, and the SOT23 case with the type
designation IMBD4448-V
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Part
Parameter
1N4448WS-V-GS18 or 1N4448WS-V-GS08
f ≥ 50 Hz
t < 1 s and T
Test condition
j
Ordering code
= 25 °C
e3
Symbol
I
I
V
F(AV)
P
FSM
V
RM
tot
R
Type Marking
A3
Vishay Semiconductors
Value
150
200
100
350
75
1N4448WS-V
1)
1)
20145
Tape and Reel
Remarks
www.vishay.com
Unit
mW
mA
mA
V
V
1

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1N4448WS-V Summary of contents

Page 1

... Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4448WS-V 1N4448WS-V-GS18 or 1N4448WS-V-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Reverse voltage Peak reverse voltage f ≥ ...

Page 2

... Vishay Semiconductors Thermal Characteristics °C, unless otherwise specified amb Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature 1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage ...

Page 3

... Rev. 1.0, 04-Sep- 17440 Figure 4. Relative Capacitance vs. Reverse Voltage ° kHz 17441 Figure 5. Leakage Current vs. Junction Temperature 150 200 1N4448WS-V Vishay Semiconductors ° MHz 1.0 0.9 0.8 0 ...

Page 4

... Vishay Semiconductors A 100 FRM 0 17442 Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Package Dimensions in mm (Inches): SOD323 0.25 (0.010) min cathode bar 2.85 (0.112) 2.50 (0.098) Document no.: S8-V-3910.02-001 (4) Rev Date: 08.November 2004 17443 www ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81387 Rev. 1.0, 04-Sep-06 and may do so without further notice. 1N4448WS-V Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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