1SS355 EIC Semiconductor Incorporated, 1SS355 Datasheet - Page 2

• Manufacturer Part Number: 1SS355
• Description: Silicon Epitaxial High Speed Switching Diode
• Manufacturer: EIC Semiconductor Incorporated

Page 2 of 2
100μ
100m
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10m
80
60
40
20
1m
1
0
0
0
25
AMBIENT TEMPERATURE, (
0.2
FORWARD VOLTAGE, VOLTS
Ta = 25 °C
50
0.4
RATING AND CHARACTERISTIC CURVES ( 1SS355 )
75
0.6
100
0.8
125
1.0
150
1.2
°
C)
175
1.4
FIG.2 - MAXIMUM SURGE CURRENT
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
0.1m
10μ
100n
100
10n
1μ
10
1
0.1
0
20
Ta = 125 °C
Ta = 25 °C
1
REVERSE VOLTAGE, VOTES
PULSE WIDTH, tp (ms)
40
10
60
100
80
Rev. 02 : February 20,2006
1000
100
10000
120
140