US112S-N-4 Unisonic Technologies, US112S-N-4 Datasheet

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US112S-N-4

Manufacturer Part Number
US112S-N-4
Description
Silicon Controlled Rectifiers
Manufacturer
Unisonic Technologies
Datasheet
UTC US112S/N
SCRs
DESCRIPTION
control found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, in-rush current limiting circuits,
capacitive
circuits...
ABSOLUTE MAXIMUM RATINGS
Repetitive peak off-state voltages
RMS on-state current (180° conduction angle) (Tc = 105°C)
Average on-state current (180° conduction angle) (Tc = 105°C)
Non repetitive surge peak on-state current (Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr ≤ 100 n s, F = 60 Hz , Tj = 125°C,)
Peak gate current (tp=20µs, Tj = 125°C)
Maximum peak reverse gate voltage
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
UTC
The UTC US112S/N is suitable to fit all modes of
discharge
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
UNISONIC TECHNOLOGIES CO., LTD.
ignition,
PARAMETER
voltage
US112S/N-4
US112S/N-6
US112S/N-8
tp=8.3ms
tp=10ms
regulation
1: CATHODE
SYMBOL
I
P
V
T(RMS)
I
dI/dt
Tstg
1
I
T(AV)
I
G(AV)
V
V
TSM
RGM
I²t
GM
Tj
DRM
RRM
US112S
2: ANODE
RATING
-40 ~ +150
-40 ~ +125
400
600
800
146
140
12
98
50
8
4
1
US112N
5
TO-220
QW-R301-013,B
SCR
3: GATE
UNIT
A/µs
A²S
°C
°C
W
V
A
A
A
A
V
1

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US112S-N-4 Summary of contents

Page 1

... UTC US112S/N SCRs DESCRIPTION The UTC US112S/N is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits, capacitive discharge ignition, voltage circuits... ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages RMS on-state current (180° ...

Page 2

... UTC US112S/N UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS (Tj=25℃unless otherwise specified) PARAMETER SYMBOL Gate trigger Current I GT Gate trigger Voltage V GT Gate non-trigger voltage V GD Reverse gate voltage V RG Holding Current I H Latching Current I L Circuit Rate Of Change Of dV/dt off-state Voltage On-state voltage V TM ...

Page 3

... IT(av)( Fig.3-1:Relative variation of thermal impedance junction to case vs pulse duration. K=<Zth(j-c)/Rth(j-c)> 1.0 0.5 0.2 tp(s) 0.1 1E-3 1E-2 1E-1 Figure.4-1:Relative variation of gate trigger current,holding current and latching vs junction temperature (US112S) IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃) 2.0 1.8 1.6 IGT 1.4 1.2 IH&IL Rgk=1kΩ 1.0 0.8 0.6 0.4 0.2 Tj(℃) 0.0 -40 - 100 UTC UNISONIC TECHNOLOGIES CO ...

Page 4

... ITSM 1000 dI/dt US112S limitation US112N 100 US112S tp(ms) 10 0.01 0.10 1.00 UTC UNISONIC TECHNOLOGIES CO., LTD. Fig.6: Relative variation of dV/dt immunity vs gate- cathode resistance(typical values) (US112S) dV/dt(Rgk)/dV/dt(Rgk=220Ω) 10.0 Ta=25℃ 1.0 0.1 0.0 0.2 1E+1 Fig.8: Surge peak on-state current vs number of cycles dV/dt(Rgk)/dV/dt(Rgk=220Ω) 10.0 1.0 0.1 0.0 0.2 150 125 Fig.10: On-state characteristics(maximum values). ...

Page 5

... UTC US112S/N UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury ...

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