S1ZB20 EIC Semiconductor Incorporated, S1ZB20 Datasheet - Page 2

• Manufacturer Part Number: S1ZB20
• Description: Mini-bridge Rectifiers
• Manufacturer: EIC Semiconductor Incorporated

Page 2 of 2
0.01
1.0
0.8
0.6
0.4
0.2
0.1
0
10
1
0
0
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
Glass Epoxy
FIG.1 - DERATING CURVE FOR OUTPUT
Substrate
Aluminum Substrate
Resistive Load
0.2
25
AMBIENT TEMPERATURE, ( C)
FORWARD VOLTAGE, VOLTS
0.4
RECTIFIED CURRENT
50
RATING AND CHARACTERISTIC CURVES ( S1ZB20 - S1ZB80 )
0.6 0.8
75
T
1.0 1.2
L
100
= 25 C
Pulse Width = 300 s
1% Duty Cycle
125
1.4 1.6
150
1.8
175
2.0
0.01
100
10
1.0
0.1
12
30
24
18
6
0
0
1
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
20
NUMBER OF CYCLES AT 60Hz
2
PERCENT OF RATED PEAK
Single Half Sine-Wave
REVERSE VOLTAGE, (%)
(JEDEC Method)
FORWARD SURGE CURRENT
PER BRIDGE ELEMENT
Ta = 40 C
PER BRIDGE ELEMENT
T
T
40
J
J
4
= 125 C
= 25 C
6
60
10
80
20
100
Rev. 02 : March 24, 2005
40
120
60
140
100