C770 Silicon Power Corporation, C770 Datasheet - Page 2

• Manufacturer Part Number: C770
• Description: Inverter Thyristo R C770 & C770a 77mm / 1800v / 60-80us
• Manufacturer: Silicon Power Corporation

PARAMETER
Rep. peak rev.
& off-state volts
Reverse & off-
state current
Average on-state
current
Non-rep. half cycle I
surge current
On-state voltage
Critical rate of rise di/dt
of on-state current
Critical rate of rise dv/dt
of off-state voltage
Recovery current
Turn-on delay
Thermal resistance R
SIGC770A/89C
100
10
3000
1
Energy per Pulse (joules)
ENERGY LOSS PULSE / C770 THYRISTOR
3500
Half sine pulses / No reverse loss
4000
LIMITING CHARCTERISTICS
SYMBOL
V
V
I
I
I
V
I
t
RRM
DRM
T(AV)
TSM
RM
d
RRM
DRM
TM
linear
thJ-C
C770 only
Peak Current (amperes)
Peak Current (amperes)
(rep)
4500
C770
5000
5500
50 Hz (10 ms)
CONDITIONS
Tj = -40 to +125
Tj = 125
T
60 Hz (8.3ms)
I
special C770A
T
Tj=125
Tj=125
V
Tj=125
@ 25 A/us
V
T
CASE
CASE
DCRIT
D
= 2000A
TEST
=67%V
= 70
= 125
=67%V
6000
o
o
o
C 60Hz
C 60Hz
C
o
C
o
DRM
C
o
pulse width
C
6500
DRM
o
9000
2000
1000
C
7000
5000
(us)
500
750
250
7000
LIMIT
up to
1800
100
2100
38
35
1.55
1.60
300
500
200
2
.012
C770TR1/91a 2/7/91
100
UNITS
10
3000
1
kA
o
ma
A
V
A/us
V/us
A
us
V
C/watt
Energy per Pulse (joules)
3500
Trapezoidal Wave - no reverse voltage
- LEM Thyristometre
- Naturally Commutating Circuit
- Naturally Commutating Circuit
4000
ENERGY PER PULSE
SELECTED RECOVERY TESTS
Peak Current, It (amperes)
Peak Current, It (amperes)
C770 only
conditions for Tq <= 80us
conditions for Tq <= 60us
conditions :
I
di/dt = 100 A/us
4500
RM
<= 400A
5000
Turn-off Time
@ Tj = 125
di
V
400V/us to 67%V
type C770A only
It = 3000 A
di
80 - 100V/us initial
Vd = 1000V
type C770A only
snubber R=60
S = t
9000
R
R
R
dt = 60 A/us
dt = 25 A/us
= - 5V
5500
b
/t
C770
a
o
>= 0.33
C
Type C770
di
V
Q
R-appl'd
RR
R
6000
PG:6.078 Sh 2
DATE: 12/1/98
dt = 60 A/us
<= 2000 C
7000
=350V
pulse width
6500
C= 1 F
DRM
2000
5000
1000
(us)
750
500
250
7000