C771 Silicon Power Corporation, C771 Datasheet - Page 2

• Manufacturer Part Number: C771
• Description: C771 77mm / 2800v / 100us
• Manufacturer: Silicon Power Corporation

PARAMETER
Repetitive peak off-
state & reverse
voltage
Off-state & reverse
current
Peak half cycle
non-repetitive
surge current
On-state voltage
Critical rate of
rise of on-state
current
Critical rate of
rise of off-state
voltage
Peak recovery
current
Circuit commutated
turn-off time
92I:
200
100
10
1
3
Energy per Pulse (joules)
LIMITING CHARACTERISTICS
SYMBOL
V
I
I
V
di/dt
dv/dt
I
t
4
DM
TSM
RM
Q
DRM
TM
/I
RM
rep
/V
ON-STATE ENERGY
RRM
Half Sine Pulses
@ V
@ 80% V
Peak Current (kA)
Peak Current (kA)
5
DRM
/V
DRM
RRM
TEST
CONDITIONS
T
to +125
T
60Hz (8.3ms
50Hz (10ms)
I
t
T
V
60Hz Tj=125
see gate drive
V
T
T
@ 10A/us
@ 50A/us
@ 100 A/us
400V/us to 80% V
Vr =
P
T
J
j
/V
J
j
J
D
DCRIT
= 8.3ms
= 2000A
= 125
= 125
= -40
code LE
= 125
= 125
= 60%V
RRM
> 50
6
= 80%V
o
codes LM & LS
C
o
o
o
o
C
C
C
C
V
DRM
o
C
DRM
DRM
7
9000
7000
5000
2000
1000
LIMIT
up to
2800V
150
32.5
30
1.74
300
500
130
450
750
100
pulse
width
750
500
250
(us)
UNITS
volts
ma
kA)
volts
A/us
v/us
A
us
92I:
20
30
60
50
40
10
300
200
100
10
1
1
Itsm (kA)
3
Energy per Pulse (joules)
2.03
52
Pulse Width - milliseconds
Pulse Width - milliseconds
4
Non-Repetitive Half-Cycle
Peak Surge Current & I2t
ON-STATE ENERGY
Trapezoidal Wave
di/dt = 100 A/us
Peak Current, It (kA)
Peak Current, It (kA)
C771 / 6RT215
5
3
6
5
I2t (amp-sq-sec)
7
spec2:
1000
9000
5000
2000
7000
750
500
250
pulse
width
(us)
7/31/96
10
4.5
30
2E6
5E6
4E6
3E6