MSK4804 M. S Kennedy, MSK4804 Datasheet

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MSK4804

Manufacturer Part Number
MSK4804
Description
1200v/100a Sic Half Bridge
Manufacturer
M. S Kennedy
Datasheet
4707 Dey Road Liverpool, N.Y. 13088
FEATURES:
DESCRIPTION:
aerospace and other severe environment applications. The SiC(Silicon Carbide) technology has superior switching perfor-
mance compared to Si-Based modules. The half bridge configuration and 1200V/100A rating make it ideal for use in high
current motor drive and inverter applications. The Aluminum Silicon Carbide (AlSiC) baseplate offers superior flatness and
light weight; far better than copper or copper alloys found in most high power plastic modules. The high thermal conductiv-
ity materials used to construct the MSK 4804 allow high power outputs at elevated baseplate temperatures. Our propri-
etary coating, SEES™ - Severe Environment Encapsulation System - protects the internal circuitry of MSK PEM's from
moisture and contamination, allowing them to pass the rugged environmental screening requirements of military and aero-
space applications. MSK PEM's are also available with industry standard silicone gel coatings for a lower cost option.
MIL-PRF-38534 CERTIFIED
Motor Drives
Inverters
Half Bridge Configuration
Silicon Carbide Mosfet Provides Ultra Fast Switching
Silicon Carbide Diode Provides Near Zero Recovery
1200V Rated Voltage
100A Continuous Output Current
Internal Zener Clamps on Gates
Proprietary Encapsulation Provides Near Hermetic Performance
MIL-PRF-38534 Screening Available (Modified)
Light Weight Domed ALSIC Baseplate
Robust Mechanical Design for Hi-Rel Applications
Ultra-Low Inductance Internal Layout
Withstands 96 Hours HAST and Thermal Cycling (-55°C to +125°C)
The MSK 4804 is one of a family of plastic encapsulated modules (PEM) developed specifically for use in military,
M.S.KENNEDY CORP.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
SiC HALF BRIDGE
1200V/100A
PEM
1
PRELIMINARY
4804
(315) 701-6751
Rev. A 1/10

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MSK4804 Summary of contents

Page 1

MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery 1200V Rated Voltage 100A Continuous Output Current Internal Zener Clamps on Gates ...

Page 2

ABSOLUTE MAXIMUM RATING Collector to Emitter Voltage Gate to Emitter Voltage GS I Current (Continuous) OUT Current Pulsed (1mS) I OUTP Case Isolation Voltage V CASE ELECTRICAL SPECIFICATIONS NOTES: 1 Guaranteed by design but not tested. Typical ...

Page 3

APPLICATION NOTES THERMAL CALCULATIONS Power dissipation and maximum allowable temperature rise involve many variables working together. Drain current, PWM duty cycle and switching frequency all factor into power dissipation. DC losses or "ON-TIME" losses are simply V x Drain Current ...

Page 4

TYPICAL PERFORMANCE CURVES PRELIMINARY 4 Rev. A 1/10 ...

Page 5

SCREENING CHART PRELIMINARY 5 Rev. A 1/10 ...

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... MECHANICAL SPECIFICATIONS WEIGHT = 200 GRAMS MAX. ORDERING INFORMATION MSK4804 H THE ABOVE EXAMPLE IS A MILITARY SCREENED MODULE. The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products. ...

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