STP6308 Stanson Technology Co., Ltd., STP6308 Datasheet - Page 3

• Manufacturer Part Number: STP6308
• Description: Dual P Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

Parameter
Parameter
OFF
OFF
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
D D D D YNAMIC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Parameter
Parameter
OFF
OFF CHARACTERISTICS
YNAMIC
YNAMIC
YNAMIC
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
ELECTRICAL
ELECTRICAL
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
T
T
Symbol
Symbol
Symbol
Symbol
V
R
V
d(on)
d(off)
(BR)DSS
I
g
t
t
I
I
DS(on)
C
GS(th)
V
C
D(on)
Q
C
Q
r
f
Q
GSS
DSS
fs
oss
SD
rss
iss
gs
gd
g
V
DD
=10V, RL=20Ω, I
V
V
V
V
DS
V
V
V
V
V
DS
V
GEN
V
V
DS
I
GS
GS
GS
GS
DS
DS
=-10V,V
V
S
DS
DS
=0V,V
=VGS,I
=0.5A,V
Dual P Channel Enhancement Mode MOSFET
DS
=4.5V,I
=2.5V,I
=1.8V,I
=0V,I
≦5V,V
=-4.5V, RG=6Ω
=10V,I
Condition
Condition
Condition
Condition
=20V,V
=20V,V
I
=-10V,V
T
D
f=1MHz
=0.88A
J
=85℃
GS
D
D
GS
GS
=250uA
=+/-12V
D
GS
=250uA
D
D
D
GS
GS
=1.0A
=4.5V
=1.0A
=0.8A
=0.5A
=-4.5V,
=0V
=0V
=0V
GS
D
=0V
=-0.5A,
-0.35
ST
STP P P P 630
ST
ST
Min
Min
Min
Min
-20
-2
STP6308 2009. V1
630
6308 8 8 8
630
-0.8
Typ
Typ
Typ
Typ
420
580
750
145
1.5
1.5
0.3
0.2
10
18
15
12
25
25
-1.0A
±100
Max
Max
Max
Max Unit
30
40
45
20
-0.8
-1.2
520
700
950
2.0
-5
-1
nS
Unit
Unit
Unit
mΩ
nA
uA
nC
pF
V
V
A
S
V