STP1013 Stanson Technology Co., Ltd., STP1013 Datasheet - Page 3

• Manufacturer Part Number: STP1013
• Description: Dual P Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

Parameter
Parameter
OFF
OFF
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
D D D D YNAMIC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Parameter
Parameter
OFF
OFF CHARACTERISTICS
YNAMIC
YNAMIC
YNAMIC
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
ELECTRICAL
ELECTRICAL
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
T
T
Symbol
Symbol
Symbol
Symbol
V
R
V
d(on)
d(off)
(BR)DSS
I
g
t
t
I
I
DS(on)
GS(th)
V
D(on)
Q
Q
r
f
Q
GSS
DSS
fs
SD
gs
gd
g
V
DD
=-10V, RL=10Ω, I
V
V
V
V
V
V
V
V
DS
V
GS
GS
GS
I
V
DS
GEN
V
V
DS
DS
S
DS
GS
=-10V,V
=-4.5V,I
=-2.5V,I
=-1.8V,I
=-0.15A,V
DS
DS
=-10V,I
≦-4.5V,V
=VGS,I
Dual P Channel Enhancement Mode MOSFET
=0V,V
=0V,I
=-4.5V, RG=6Ω
Condition
Condition
Condition
Condition
V
=20V,V
=20V,V
T
DS
J
=55℃
=-0.6A
D
GS
D
D
GS
=250uA
D
D
D
=250uA
=-0.25A
=±12V
GS
GS
=-0.45A
=-0.35A
=-0.25A
GS
GS
=-4.5V,
=0V
=0V
=-5V
=0V
D
=-0.4A,
-0.35
ST
ST
ST
STP1013
-0.7
Min
Min
Min
Min
-20
STP1013 2009. V1
P1013
P1013
P1013
0.35
-0.8
Typ
Typ
Typ
Typ
420
580
750
0.4
1.5
0.3
8
1.4
15
5
-0.45A
±100
Max
Max
Max
Max Unit
-0.8
-1.2
520
700
950
2.0
10
25
15
1.8
-1
-5
nS
Unit
Unit
Unit
mΩ
nA
uA
nC
V
V
A
S
V