SD5491-002 Honeywell, SD5491-002 Datasheet
SD5491-002
Related parts for SD5491-002
SD5491-002 Summary of contents
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... Mechanically and spectrally matched to SE3450/5450, SE3455/5455 and SE3470/5470 infrared emitting diodes DESCRIPTION The SD5491 is an NPN silicon phototransistor mounted in a TO-18 metal can package. A biconvex lens provides high optical sensitivity with a narrow acceptance angle to enable maximum radiation coupling. The TO-18 package offers protection against harsh environments as well as excellent thermal characteristics ...
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... SD5491 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C. ...
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... SD5491 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Dark Current vs Temperature 1000 100 10 1.0 0 100 Temperature - °C 114 cir_003.cdr Fig. 2 Collector Current vs Irradiance gra_042.ds4 Fig. 4 ...
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... SD5491 Silicon Phototransistor Fig. 5 Spectral Responsivity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 400 600 800 1000 1200 Wavelength - nm Fig. 7 Collector Current vs Ambient Temperature All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. Fig. 6 Coupling Characteristics with SE5470 gra_036 ...