1617AB35 GHz Technology, Inc., 1617AB35 Datasheet
1617AB35
Manufacturer Part Number
1617AB35
Description
35 W, 25 V, 1600-1700 MHz common emitter transistor
Manufacturer
GHz Technology, Inc.
Datasheet
1.1617AB35.pdf
(4 pages)
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
ELECTRICAL CHARACTERISTICS @ 25 C
Issue January 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GENERAL DESCRIPTION
The 1617AB35 is a COMMON EMITTER transistor capable of providing 35
Watts of Class AB, RF output power over the band 1600 - 1700 MHz. This
transistor is specifically designed for SATCOM COMMUNICATIONS
amplifier applications. It includes Input prematching and utilizes Gold
metalization and EMITTER BALLASTING to provide high reliability and
supreme ruggedness. .
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
Maximum Voltage and Current
BVces
LVceo
BVebo
Ic
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
SYMBOL
Pout
Pin
Pg
VSWR
IMD
BVces
LVceo
BVebo
Ices
h
Cob
FE
jc
c
3
Collector Current
Emitter to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
3rd Order IMD
o
F =1700 MHz
Vce = 25 Volts
Icq = 250 mAmps
As Above
As Above
As Above
Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 27 Volts
Vce = 5 V, Ic = 0.7 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
- 65 to + 150 C
TEST CONDITIONS
14.0 Amps
120 Watts
3.5 Volts
+ 230 C
60 Volts
27 Volts
o
O
o
o
35 Watts, 25 Volts, Class AB
Satcom 1600 - 1700 MHz
1617AB35
A49
COMMON EMITTER
MIN
9.0
3.5
35
60
27
20
55AR, STYLE 2
CASE OUTLINE
TYP
10.0
50
36
MAX
100
-30
4.5
3:1
1.6
10
UNITS
Watt
Watt
Volts
Volts
Volts
o
dBc
C/W
mA
dB
pF
%
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1617AB35 Summary of contents
Page 1
... GENERAL DESCRIPTION The 1617AB35 is a COMMON EMITTER transistor capable of providing 35 Watts of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM COMMUNICATIONS amplifier applications. It includes Input prematching and utilizes Gold metalization and EMITTER BALLASTING to provide high reliability and supreme ruggedness ...
Page 2
... August 1996 Typical Performance 1617AB35 ...
Page 3
...
Page 4
...