M74VHC1G126DFT2G ON Semiconductor, M74VHC1G126DFT2G Datasheet - Page 2

• Manufacturer Part Number: M74VHC1G126DFT2G
• Description: IC BUFFER TRI-ST NON-INV SOT353
• Manufacturer: ON Semiconductor
• Series: 74VHCr

Specifications of M74VHC1G126DFT2G

• Logic Type: Buffer/Line Driver, Non-Inverting
• Number Of Elements: 1
• Number Of Bits Per Element: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Logic Family: VHC
• Number Of Channels Per Chip: 1
• Polarity: Non-Inverting
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• High Level Output Current: - 8 mA
• Low Level Output Current: 8 mA
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 55 C
• Number Of Lines (input / Output): 1 / 3
• Output Type: 3-State
• Propagation Delay Time: 11.5 ns at 3.3 V, 7.5 ns at 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M74VHC1G126DFT2GOS; MC74VHC1G126DFT2GOS; MC74VHC1G126DFT2GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
Device Junction Temperature versus
Time to 0.1% Bond Failures
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Symbol
Symbol
I
Temperature °C
Latchup
V
V
V
I
V
V
t
T
V
I
I
q
V
OUT
r
P
OUT
I
T
T
ESD
OUT
T
OK
CC
CC
IK
stg
CC
JA
, t
IN
IN
A
D
L
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 secs
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND
Characteristics
Characteristics
Time, Years
Above V
117.8
47.9
20.4
9.4
4.2
2.0
1.0
MC74VHC1G126
http://onsemi.com
CC
and Below GND at 125°C (Note 4)
Charged Device Model (Note 3)
Human Body Model (Note 1)
2
V
OUT
Machine Model (Note 2)
Figure 3. Failure Rate vs. Time Junction Temperature
< GND; V
1
V
V
SC−88A, TSOP−5
CC
CC
High or Low State
SC−88A, TSOP−5
1
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
OUT
V
CC
> V
= 0
CC
10
TIME, YEARS
Min
−55
2.0
0.0
0.0
−0.5 to V
0
0
−0.5 to +7.0
−0.5 to +7.0
−65 to +150
−0.5 to 7.0
> 2000
Value
> 200
+150
±500
+20
+25
+50
N/A
−20
200
333
260
100
CC
+ 0.5
+125
Max
V
100
5.5
5.5
20
CC
1000
°C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V