STT181 Sirectifier Semiconductors, STT181 Datasheet
STT181
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STT181 Summary of contents
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... Thyristor-Thyristor Modules Type STT181GK08 STT181GK12 STT181GK14 STT181GK16 STT181GK18 Symbol Test Conditions VJM TRMS FRMS =85 C; 180 sine C TAVM FAVM TSM FSM VJM = VJM ...
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... DC current R thJK per module Creeping distance on surface d S Strike distance through air d A Maximum allowable acceleration a FEATURES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ STT181 DRM o =125 = =- = =-40 C ...
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... I : Crest value, t: duration TSM FSM Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode STT181 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature STT181 Fig versus time (1-10 ms) Fig ...
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... STT181 Thyristor-Thyristor Modules 3 x STT181 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) R for various conduction angles d: thJC d R (K/W) thJC DC 0.155 o 180 C 0.167 o 120 C 0.176 0.197 ...