M25P20-VMN6TP/X Numonyx, B.V., M25P20-VMN6TP/X Datasheet - Page 48

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M25P20-VMN6TP/X

Manufacturer Part Number
M25P20-VMN6TP/X
Description
2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface
Manufacturer
Numonyx, B.V.
Datasheet
Revision history
13
48/50
Revision history
Table 24.
25-May-2001
16-May-2002
11-Sep-2001
12-Sep-2002
13-Dec-2002
24-Nov-2003
05-Aug-2004
21-Dec-2004
01-Aug-2005
12-Apr-2001
16-Jan-2002
26-Apr-2004
Date
Document revision history
Revision
1.0
1.1
1.2
1.3
1.4
1.5
1.6
2.0
3.0
4.0
5.0
6.0
Document written
Serial Paged Flash Memory renamed as Serial Flash Memory
Changes to text: Signal Description/Chip Select; Hold Condition/1st para;
Protection modes; Release from Power-down and Read Electronic
Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their
contents
Power-up timing illustration; SO8W package removed
Changes to tables: Abs Max Ratings/V
FAST_READ instruction added. Document revised with new timings, V
I
Programming, Release for Deep Power-down made more precise. Value
of t
Clarification of descriptions of entering Standby Power mode from Deep
Power-down mode, and of terminating an instruction sequence or data-
out sequence.
VFQFPN8 package (MLP8) added. Document promoted to full datasheet.
Typical Page Program time improved. Write Protect setup and hold times
specified, for applications that switch Write Protect to exit the Hardware
Protection mode immediately before a WRSR, and to enter the Hardware
Protection mode again immediately after.
Table of contents, warning about exposed paddle on MLP8, and Pb-free
options added.
40MHz AC Characteristics table included as well as 25MHz. I
t
package
Automotive range added. Soldering temperature information clarified for
RoHS compliant devices. Device Grade clarified
Device Grade information clarified. Data-retention measurement
temperature corrected. Details of how to find the date of marking added.
2 Notes removed from
changes. End timing line of t
Updated Page Program (PP) instructions in
Program
(Device Grade
CC3
SE
(typ) and t
W
and clock slew rate. Descriptions of Polling, Hold Condition, Page
(max) modified.
(PP),
BE
Instruction Times (Device Grade 6)
3).
(typ) values improved. Change of naming for VDFPN8
Table 23: Ordering Information
SHQZ
Changes
modified in
IO
; DC Characteristics/V
Page
Figure 25: Output
Programming,
and
Scheme. Small text
Instruction Times
CC3
IL
Timing.
Page
M25P20
(max),
WI
,

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