M25P10-AVMB6TP/X Numonyx, B.V., M25P10-AVMB6TP/X Datasheet - Page 38
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M25P10-AVMB6TP/X
Manufacturer Part Number
M25P10-AVMB6TP/X
Description
1 Mbit, serial Flash memory, 50 MHz SPI bus interface
Manufacturer
Numonyx, B.V.
Datasheet
1.M25P10-AVMB6TPX.pdf
(51 pages)
DC and AC parameters
38/51
Table 15.
1. Only for products with process technology code X.
2. Preliminary data.
Table 16.
1. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
2. t
Symbol
Symbol
t
I
I
I
I
I
I
I
V
PP
V
V
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
V
t
t
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256).
I
t
LO
SE
BE
PP
OH
W
LI
OL
IH
IL
(1)
=2
μ
s+8
Input Leakage current
Output Leakage current
Standby current
Deep Power-down current
Operating current (READ)
Operating current (PP)
Operating current (WRSR)
Operating current (SE)
Operating current (BE)
Input Low voltage
Input High voltage
Output Low voltage
Output High voltage
Alt.
μ
DC characteristics (device grade 3)
Instruction times (device grade 6)
s*[int(n-1)/2+1]+4
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Bulk Erase cycle time
Parameter
Test conditions specified in
μ
s*[int(n-1)/2]+2
Parameter
C = 0.1V
C = 0.1V
Test condition (in addition to
S = V
S = V
μ
s, in products with process technology code X and Y.
those in
CC
CC
CC
CC
I
OH
I
OL
, V
, V
Q = open
Q = open
/ 0.9.V
/ 0.9.V
S = V
S = V
S = V
S = V
= –100 μA
= 1.6 mA
Table 10
IN
IN
(1)
Table
= V
= V
CC
CC
CC
CC
CC
CC
SS
SS
at 25 MHz,
at 20 MHz,
10)
Min
or V
or V
and
CC
CC
Table 12
n*1/256
0.4+
0.65
Typ
1.4
1.7
V
5
0.7V
Min
CC
–0.5
(2)
–0.2
(2)
CC
V
Max
0.3V
Max
15
CC
5
3
6
100
± 2
± 2
0.4
50
15
15
15
15
M25P10-A
8
4
+0.4
(2)
CC
Unit
ms
ms
Unit
s
s
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V