APTC60DDAM70T3 Advanced Power Technology, APTC60DDAM70T3 Datasheet - Page 6

• Manufacturer Part Number: APTC60DDAM70T3
• Description: Dual boost chopper Super Junction MOSFET Power Module
• Manufacturer: Advanced Power Technology

Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
160
140
120
100
350
300
250
200
150
100
2.5
1.5
0.5
80
60
40
20
50
2
1
0
0
0
0
5
0
Operating Frequency vs Drain Current
V
D=50%
R
T
T
V
R
T
L=100µH
J
C
DS
G
J
DS
G
=125°C
=75°C
=125°C
Switching Energy vs Current
=5Ω
=5Ω
V
R
T
L=100µH
10
=400V
=400V
10
J
DS
10
G
=125°C
Delay Times vs Current
=5Ω
=400V
I
I
I
D
D
20
20
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
switching
15
hard
30
30
20
ZCS
40
40
E
off
APT website – http://www.advancedpower.com
25
td(off)
50
td(on)
50
E
ZVS
on
30
60
60
70
70
35
1000
120
100
100
80
60
40
20
10
0
5
4
3
2
1
0
1
APTC60DDAM70T3
Source to Drain Diode Forward Voltage
0.3
0
0
Switching Energy vs Gate Resistance
V
R
T
L=100µH
V
I
T
L=100µH
DS
J
G
D
=125°C
=5Ω
DS
J
=39A
5 10 15 20 25 30 35 40 45 50
=125°C
=400V
V
10
=400V
Rise and Fall times vs Current
SD
0.5
Gate Resistance (Ohms)
, Source to Drain Voltage (V)
I
20
D
, Drain Current (A)
T
0.7
J
=150°C
30
0.9
T
40
J
=25°C
E
E
1.1
off
on
50
t
t
r
f
1.3
60
1.5
70
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