APT13003EU-E1 BCD Semiconductor, APT13003EU-E1 Datasheet - Page 3

• Manufacturer Part Number: APT13003EU-E1
• Description: HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
• Manufacturer: BCD Semiconductor

Thermal Characteristics
May 2008 Rev. 1. 2
Note 3: Pulse test for Pulse Width
( T
Electrical Characteristics
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
Parameter
Thermal Resistance (Junction-to-Case)
Thermal Resistance (Junction-to-Ambient)
Parameter
Collector Cut-off Current
Collector-Emitter Sustaining
Voltage (I
Collector-Emitter Saturation
Voltage (Note 3)
Base-Emitter Saturation Voltage
(Note 3)
DC Current Gain (Note 3)
Output Capacitance
Current Gain Bandwidth Product
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
(V
C
=25
BE
=-1.5V)
o
C, unless otherwise specified.)
B
=0)
≤
300μs, Duty Cycle
V
V
V
Symbol
CEO
CE
BE
I
h
C
CEV
ton
f
ts
tf
FE
ob
T
(sat)
(sat)
(sus)
For TO-126
For TO-126
For TO-92
For TO-92
≤ 2%.
V
I
I
I
I
I
I
I
I
V
V
I
I
C
C
C
C
C
C
C
C
C
B2
CE
CB
CE
=100μA
=0.5A, I
=1.0A, I
=0.5A, I
=1.0A, I
=0.3A, V
=0.5A, V
=1.0A, V
=1A, V
=-0.2A, T
=700V
=10V, I
=10V, f=0.1MH
3
Conditions
CC
B
B
B
B
CE
CE
CE
=0.1A
=0.25A
=0.1A
=0.25A
C
=125V, I
P
=0.1A
=2V
=2V
=2V
=25μS
Symbol
R
R
BCD Semiconductor Manufacturing Limited
Z
θJA
θ
B1
JC
=0.2A,
Min
465
15
13
5
4
Value
113.6
83.3
6.25
96
0.17
0.29
0.28
Typ
0.3
1.8
17
16
APT13003E
Max
Data Sheet
0.3
0.4
1.0
1.2
0.4
10
30
25
1
3
o
o
Unit
C/W
C/W
MHz
Unit
μA
pF
μs
V
V
V