AM29LV128ML-123REI Advanced Micro Devices, AM29LV128ML-123REI Datasheet

AM29LV128ML-123REI

Manufacturer Part Number

AM29LV128ML-123REI

Description

Manufacturer

Advanced Micro Devices

Datasheets

1.AM29LV128ML-123REI.pdf (62 pages)

2.AM29LV128ML-123REI.pdf (68 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AM29LV128ML-123REI

Manufacturer:

AMD

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18 456

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Am29LV128M

128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit

Uniform Sector Flash Memory with VersatileI/O Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

PERFORMANCE CHARACTERISTICS

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Single power supply operation

— 3 volt read, erase, and program operations

VersatileI/O

— Device generates data output voltages and tolerates

Manufactured on 0.23 µm MirrorBit process

technology

SecSi

— 128-word/256-byte sector for permanent, secure

— May be programmed and locked at the factory or by

Flexible sector architecture

— Two hundred fifty-six 32 Kword (64 Kbyte) sectors

Compatibility with JEDEC standards

— Provides pinout and software compatibility for

Minimum 100,000 erase cycle guarantee per sector

20-year data retention at 125 C

High performance

— 100 ns access time

— 30 ns page read times

— 0.5 s typical sector erase time

— 15 s typical effective write buffer word programming

ADVANCE INFORMATION

data input voltages on the CE# and DQ

inputs/outputs as determined by the voltage on the

identification through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

the customer

single-power supply flash, and superior inadvertent

write protection

time: 16-word/32-byte write buffer reduces overall

programming time for multiple-word updates

pin; operates from 1.65 to 3.6 V

(Secured Silicon) Sector region

control

Refer to AMD’s Website (www.amd.com) for the latest information.

SOFTWARE & HARDWARE FEATURES

— 4-word/8-byte page read buffer

— 16-word/32-byte write buffer

Low power consumption (typical values at 3.0 V, 5

MHz)

— 30 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

Package options

— 56-pin TSOP

— 64-ball Fortified BGA

Software features

— Program Suspend & Resume: read other sectors

— Erase Suspend & Resume: read/program other

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall

— CFI (Common Flash Interface) compliant: allows host

Hardware features

— Sector Group Protection: hardware-level method of

— Temporary Sector Group Unprotect: V

— WP#/ACC input accelerates programming time

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or

before programming operation is completed

sectors before an erase operation is completed

multiple-word or byte programming time

system to identify and accommodate multiple flash

devices

preventing write operations within a sector group

of changing code in locked sector groups

(when high voltage is applied) for greater throughput

during system production. Protects first or last sector

regardless of sector protection settings

erase cycle completion

3.0 Volt-only

Publication# 25270

Issue Date: February 14, 2003

Rev: B Amendment/+4

-level method

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