MRF329 Motorola, MRF329 Datasheet

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MRF329

Manufacturer Part Number
MRF329
Description
Manufacturer
Motorola
Datasheets

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF329
Manufacturer:
HITTITE
Quantity:
430
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output and driver amplifier
stages in the 100 to 500 MHz frequency range.
REV 6
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current
Total Device Dissipation @ T C = 25 C (1)
Storage Temperature Range
Thermal Resistance, Junction to Case (2)
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Motorola, Inc. 1994
Specified 28 Volt, 400 MHz Characteristics —
Built–In Matching Network for Broadband Operation Using Double Match
Technique
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
Gold Metallization System for High Reliability
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Derate above 25 C
(I C = 80 mAdc, I B = 0)
(I C = 80 mAdc, V BE = 0)
(I E = 8.0 mAdc, I C = 0)
Output Power = 100 Watts
Minimum Gain = 7.0 dB
Efficiency = 50% (Min)
— Peak
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted.)
V (BR)CEO
V (BR)CES
V (BR)EBO
Symbol
Symbol
Symbol
V CEO
V CBO
V EBO
R JC
T stg
Min
P D
4.0
30
60
I C
BROADBAND RF POWER
Typ
CASE 333–04, STYLE 1
100 W, 100 to 500 MHz
MRF329
– 65 to +150
CONTROLLED “Q”
Value
TRANSISTOR
NPN SILICON
1.54
Max
0.65
270
4.0
9.0
30
60
12
Max
Order this document
by MRF329/D
(continued)
MRF329
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
Vdc
Vdc
Vdc
C/W
C
1

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