2N3906 ON Semiconductor, 2N3906 Datasheet

2N3906

Manufacturer Part Number

2N3906

Description

Manufacturer

ON Semiconductor

Datasheets

1.2N3906RLRP.pdf (7 pages)

2.2N3906.pdf (6 pages)

Specifications of 2N3906

04+

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Current page: 1 of 7
Download datasheet (82Kb)

2N3906

General Purpose

Transistors

PNP Silicon

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

March, 2007 − Rev. 3

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Collector Current − Continuous

Total Device Dissipation @ T

Total Power Dissipation @ T

Total Device Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

Pb−Free Packages are Available*

Derate above 25°C

Characteristic

Rating

Preferred Device

= 60°C

= 25°C

(Note 1)

Symbol

CEO

CBO

EBO

, T

qJA

qJC

stg

−55 to +150

Value

Max

83.3

200

625

250

200

5.0

1.5

mW/°C

mAdc

°C/W

Unit

Vdc

°C

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

CASE 29

STYLE 1

TO−92

(Note: Microdot may be in either location)

ORDERING INFORMATION

STRAIGHT LEAD

MARKING DIAGRAM

BASE

http://onsemi.com

BULK PACK

1 2

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

ALYWG

COLLECTOR

3906

EMITTER

Publication Order Number:

TAPE & REEL

AMMO PACK

BENT LEAD

2N3906/D

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