UPA808T Renesas Electronics Corporation., UPA808T Datasheet

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UPA808T

Manufacturer Part Number
UPA808T
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
UPA808TC-T1
Manufacturer:
NEC
Quantity:
450 000
Document No. P12154EJ2V0DS00 (2nd edition)
Date Published November 1996 N
Printed in Japan
(Previous No. ID-3642)
FEATURES
• Low Noise
• A Super Mini Mold Package Adopted
• Built-in 2 Transistors (2
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
PART NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PA808T
PA808T-T1
NF = 1.3 dB TYP. @V
NF = 1.3 dB TYP. @V
Remark If you require an evaluation sample, please contact an
Note 110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PARAMETER
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
QUANTITY
NPN SILICON EPITAXIAL TRANSISTOR
CE
CE
MICROWAVE LOW NOISE AMPLIFIER
= 2 V, I
= 1 V, I
2SC5184)
SYMBOL
V
V
V
T
P
CBO
CEO
EBO
I
T
stg
C
T
j
C
C
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
= 3 mA, f = 2 GHz
= 3 mA, f = 2 GHz
90 in 1 element
180 in 2 elements
DATA SHEET
PACKING STYLE
A
–65 to +150
RATING
= 25 C)
150
30
5
3
2
Note
UNIT
mW
mA
V
V
V
C
C
SILICON TRANSISTOR
PIN CONFIGURATION (Top View)
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
PACKAGE DRAWINGS
Q
6
1
1
PA808T
1.25±0.1
2.1±0.1
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
5
2
(Unit: mm)
©
©
Q
4
3
2
1995
1994

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UPA808T Summary of contents

Page 1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES • Low Noise NF = 1.3 dB TYP 1.3 dB TYP ...

Page 2

ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Collector Cutoff Current I CBO Emitter Cutoff Current I EBO DC Current Gain h FE Gain Bandwidth Product ( Gain Bandwidth Product ( Feed-back Capacitance Insertion Power Gain ...

Page 3

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current I (mA) C NOISE FIGURE vs. COLLECTOR CURRENT 3 ...

Page 4

S-PARAMETERS mA FREQUENCY S11 MHz MAG ANG 100.0000 0.974 –6.9 200.0000 0.971 –14.0 300.0000 0.956 –20.5 400.0000 0.926 –28.4 500.0000 0.902 –34.5 600.0000 0.861 –42.2 700.0000 0.829 ...

Page 5

mA FREQUENCY S11 MHz MAG ANG 100.0000 0.784 –18.0 200.0000 0.700 –36.7 300.0000 0.606 –51.4 400.0000 0.490 –68.6 500.0000 0.412 –80.3 600.0000 0.343 –92.6 700.0000 0.299 –103.1 ...

Page 6

mA FREQUENCY S11 MHz MAG ANG 100.0000 0.441 –76.4 200.0000 0.358 –97.6 300.0000 0.290 –111.1 400.0000 0.242 –120.8 500.0000 0.208 –129.8 600.0000 0.196 –142.5 700.0000 0.190 –150.3 ...

Page 7

mA FREQUENCY S11 MHz MAG ANG 100.0000 0.916 –10.2 200.0000 0.893 –20.0 300.0000 0.850 –28.6 400.0000 0.777 –39.7 500.0000 0.731 –47.1 600.0000 0.656 –57.0 700.0000 0.592 –66.2 ...

Page 8

mA FREQUENCY S11 MHz MAG ANG 100.0000 0.805 –16.8 200.0000 0.733 –31.1 300.0000 0.645 –43.8 400.0000 0.531 –58.4 500.0000 0.445 –68.3 600.0000 0.366 –78.6 700.0000 0.311 –87.2 ...

Page 9

mA FREQUENCY S11 MHz MAG ANG 100.0000 0.474 –33.9 200.0000 0.354 57.5 300.0000 0.270 –73.3 400.0000 0.213 –85.2 500.0000 0.173 –94.8 600.0000 0.146 –105.1 700.0000 0.129 –115.0 ...

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PA808T ...

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PA808T 11 ...

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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...

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