SXA-289 Sirenza Microdevices, SXA-289 Datasheet

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SXA-289

Manufacturer Part Number
SXA-289
Description
Manufacturer
Sirenza Microdevices
Datasheet
1.SXA-289.pdf (7 pages)

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Product Description
[1] 100% Production tested.
[2] Sample tested - Samples pulled from each package/wafer lot and tested using application circuit shown on page 5.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Sirenza Microdevices’ SXA-289 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 5-2000 MHz
cellular, ISM, WLL and narrowband PCS applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
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High Linearity IF Amplifiers
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typ. at 1960 MHz
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SXA-289 Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot ...

Page 2

... Third Order Intercept vs Tone Power 44 42 25C 40 -40C 85C per tone (dBm) OUT 522 Almanor Ave., Sunnyvale, CA 94085 SXA-289 5-2000 MHz Power Amplifier =105mA, T=+25C 85C 19 85C 17 15 900 925 950 800 Third Order Intercept vs. Frequency 45 ...

Page 3

... MHz Third Order Intercept vs Tone Power 44 42 85C 40 -40C per tone (dBm) OUT 522 Almanor Ave., Sunnyvale, CA 94085 SXA-289 5-2000 MHz Power Amplifier =105mA, T=+25C 85C 14 85C 12 10 1970 1980 1990 1930 ...

Page 4

... MHz Adjacent Channel Power vs. Channel Output Power -40 +25°C +85°C -45 -40°C -50 -55 -60 -65 -70 -75 12 522 Almanor Ave., Sunnyvale, CA 94085 SXA-289 5-2000 MHz Power Amplifier , I =105mA, R =27 Ohm Bias Channel Output Power (dBm) IS-95 CDMA at 880 MHz Phone: (800) SMI-MMIC 4 =8V, IS-95, 9 Channels Forward ...

Page 5

... Voltage Feed Resistor Bias Circuit (for > 7V supply) Note: Circuit Optimized for Output IP3 Z=50W, 12.9° Schematic RFin C1 522 Almanor Ave., Sunnyvale, CA 94085 SXA-289 5-2000 MHz Power Amplifier Vs Rbias L2 C7 Z=50W, 45.5° SXA-289 C6 Vs Rbias SXA-289 ...

Page 6

... Z=50W, 12.9° C1 SXA-289 C2 Schematic RF IN NOTE: Reference Application Note AN-026 for more information on Active Current Bias Circuit. 522 Almanor Ave., Sunnyvale, CA 94085 SXA-289 5-2000 MHz Power Amplifier Rbias Vdev L1 C7 Z=50W, 45.5° ...

Page 7

... MARKING DOT DENOTES AREA PIN 1 TOP VIEW 5° .015TYP(4X) PCB Pad Layout DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 SXA-289 5-2000 MHz Power Amplifier designator on the top surface of the package. C º ...

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