SI4925BDY Vishay Semiconductors, SI4925BDY Datasheet

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SI4925BDY

Manufacturer Part Number
SI4925BDY
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Notes
a.
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1 ” x 1” FR4 Board.
i
DS
−30
−30
Ordering Information: Si4925BDY
(V)
J
ti
t A bi
G
G
S
S
1
1
2
2
0.041 @ V
0.025 @ V
J
J
a
a
1
2
3
4
Si4925BDY—T1 (with Tape and Reel)
Si4925BDY—E3 (Lead (Pb)-Free)
Si4925BDY-T1—E3 (Lead (Pb)-Free) with Tape and Reel)
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Top View
Dual P-Channel 30-V (D-S) MOSFET
SO-8
GS
GS
a
a
= −4.5 V
= −10 V
(W)
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
A
A
A
A
D
−7.1
−5.5
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
G
1
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density
APPLICATIONS
D Load Switches
P-Channel MOSFET
Process
− Notebook PCs
− Desktop PCs
− Game Stations
10 secs
Typical
S
D
1
1
−7.1
−5.7
−1.7
2.0
1.3
50
85
30
−55 to 150
G
"20
−30
−40
2
Steady State
P-Channel MOSFET
Maximum
Vishay Siliconix
−5.3
−4.3
−0.9
62.5
1.1
0.7
110
40
D
S
2
2
Si4925BDY
www.vishay.com
Unit
Unit
Available
_C/W
Pb-free
_C
C/W
W
W
V
V
A
A
1

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SI4925BDY Summary of contents

Page 1

... Top View Ordering Information: Si4925BDY Si4925BDY—T1 (with Tape and Reel) Si4925BDY—E3 (Lead (Pb)-Free) Si4925BDY-T1—E3 (Lead (Pb)-Free) with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) ...

Page 2

... Si4925BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72001 S-50366—Rev. C, 28-Feb-05 2500 2000 1500 1000 0.08 0.06 0. 25_C 0.02 J 0.00 1.0 1.2 1.4 Si4925BDY Vishay Siliconix Capacitance C iss C oss 500 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 7 1.4 1 ...

Page 4

... Si4925BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 100 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. http://www.vishay.com/ppg?72001. Document Number: 72001 S-50366—Rev. C, 28-Feb-05 −2 − Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si4925BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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