SI4804BDY Vishay Semiconductors, SI4804BDY Datasheet
SI4804BDY
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SI4804BDY Summary of contents
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... Top View Ordering Information: Si4804BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4804BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...
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... Q – Total Gate Charge (nC) g Gate Charge Document Number: 72061 S-71598-Rev. E, 30-Jul- Si4804BDY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS – Transfer Characteristics ...
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... Si4804BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 I 0.0 - 0.2 0.4 - 0 – Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 = 250 µ 100 125 150 100 Limited by r ...
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... Document Number: 72061 S-71598-Rev. E, 30-Jul- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4804BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...