MTP2N50E Freescale Semiconductor, Inc, MTP2N50E Datasheet
MTP2N50E
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MTP2N50E Summary of contents
Page 1
... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 ms) Order this document by MTP2N50E/D MTP2N50E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS R DS(on) = 3.6 OHM ...
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... MTP2N50E ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 500 Vdc Vdc 500 Vdc Vdc 125°C) Gate– ...
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... Figure 4. On–Resistance versus Drain Current 1000 100 10 1 100 125 150 0 50 100 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTP2N50E – 55°C 25°C 100°C 3.5 4 4.5 5 5 1.2 1.6 2 2.4 2.8 3.2 3 DRAIN CURRENT (AMPS) and Gate Voltage 125° ...
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... MTP2N50E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...
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... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTP2N50E t d(off d(on ...
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... MTP2N50E SINGLE PULSE 25°C 100 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 6 SAFE OPERATING AREA ...
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... PLANE C S STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN R J CASE 221A–06 ISSUE Y MTP2N50E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX ...
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... JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. ◊ 8 *MTP2N50E/D* Motorola TMOS Power MOSFET Transistor Device Data MTP2N50E/D ...