MRF5P21240 Freescale Semiconductor, Inc, MRF5P21240 Datasheet

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MRF5P21240

Manufacturer Part Number
MRF5P21240
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF5P21240HR6
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2 - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for W- CDMA base station applications with frequencies from 2110
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
2200 mA, P
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Derate above 25°C
Derate above 25°C
Case Temperature 82°C, 180 W CW
Case Temperature 77°C, 52 W CW
Power Gain — 13 dB
Drain Efficiency — 24%
IM3 @ 10 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 52 Watts Avg., Full Frequency Band, Channel
C
= 25°C
C
= 25°C
Characteristic
Rating
DD
Operation
μ
″ Nominal.
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
Document Number: MRF5P21240HR6
V
R
V
CW
T
P
T
DSS
T
θJC
GS
stg
D
C
J
2110 - 2170 MHz, 52 W AVG., 28 V
MRF5P21240HR6
LATERAL N - CHANNEL
CASE 375D - 05, STYLE 1
RF POWER MOSFET
- 65 to +150
2 x W - CDMA
Value
- 0.5, +65
- 0.5, +15
Value
1.18
0.29
0.32
603
150
200
200
NI - 1230
3.4
(1,2)
MRF5P21240HR6
Rev. 1, 5/2006
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
W
1

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MRF5P21240 Summary of contents

Page 1

... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts Operation DD ″ Nominal. μ Document Number: MRF5P21240HR6 Rev. 1, 5/2006 MRF5P21240HR6 2110 - 2170 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1230 Symbol Value ...

Page 2

... Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. MRF5P21240HR6 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...

Page 3

... Microstrip Z7, Z8 0.100″ x 0.080″ Microstrip Z9, Z10 0.490″ x 0.540″ Microstrip Figure 1. MRF5P21240HR6 Test Circuit Schematic Table 5. MRF5P21240HR6 Test Circuit Component Designations and Values Part B1, B2 Short Ferrite Beads C1, C2, C3 Chip Capacitors C5, C6, C7 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5P21240HR6 Test Circuit Component Layout MRF5P21240HR6 4 ...

Page 5

... Two−Tone Measurements, 10 MHz Tone Spacing 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power P3dB = 55.03 dBm (318. Vdc 2200 Pulsed CW, 8 μsec(on), 1 msec(off 2140 MHz INPUT POWER (dBm) in Input Power MRF5P21240HR6 300 Ideal Actual ...

Page 6

... Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 0.001 8 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal MRF5P21240HR6 6 TYPICAL CHARACTERISTICS 9 −25 10 η D −30 IM3 8 −35 ...

Page 7

... MHz Ω 2090 5.33 - j6.21 11.42 - j2.25 2110 5.44 - j5.88 10.45 - j2.16 2130 5.40 - j6.16 11.28 - j2.14 2150 5.12 - j6.06 11.38 - j2.14 2170 4.96 - j5.25 11.04 - j1.25 2190 4.98 - j4.47 10.73 - j0. Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device + Under − Test − source load Ω Output Matching Network MRF5P21240HR6 7 ...

Page 8

... MRF5P21240HR6 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF5P21240HR6 9 ...

Page 10

... MRF5P21240HR6 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... 0.117 0.137 2.97 L 0.540 BSC 13.72 BSC M 1.219 1.241 30.96 N 1.218 1.242 30. 0.120 0.130 3.05 R 0.355 0.365 9.01 S 0.365 0.375 9.27 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF STYLE PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF5P21240HR6 MAX 41.28 10.29 5.08 11.81 1.68 0.18 2.29 3.48 31.52 31.55 3.30 9.27 9.53 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5P21240HR6 Document Number: MRF5P21240HR6 Rev. 1, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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