MRF10031 Tyco Electronics, MRF10031 Datasheet

MRF10031

Manufacturer Part Number

MRF10031

Description

Manufacturer

Tyco Electronics

Datasheet

1.MRF10031.pdf (4 pages)

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

applications such as JTIDS and Mode–S transmitters.

NOTES:

REV 6

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector–Emitter Voltage

Collector–Base Voltage (1)

Emitter–Base Voltage

Collector Current — Continuous (1)

Total Device Dissipation @ T

Storage Temperature Range

Junction Temperature

Thermal Resistance, Junction to Case (3)

Designed for 960–1215 MHz long or short pulse common base amplifier

Guaranteed Performance @ 960 MHz, 36 Vdc

100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

Hermetically Sealed Industry Standard Package

Silicon Nitride Passivated

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

Internal Input Matching for Broadband Operation

1. Under pulse RF operating conditions.

2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case

Derate above 25 C

amplifiers.

measured @ 23% duty cycle)

Output Power = 30 Watts Peak

Minimum Gain = 9.0 dB Min (9.5 dB Typ)

= 25 C (1), (2)

Characteristic

Rating

Symbol

CBO

CES

EBO

stg

CASE 376B–02, STYLE 1

MICROWAVE POWER

– 65 to + 200

960–1215 MHz

TRANSISTOR

NPN SILICON

Value

0.625

30 W (PEAK)

Max

200

110

3.5

3.0

1.6

Order this document

by MRF10031/D

MRF10031

mW/ C

Watts

Unit

Vdc

Adc

C/W

value

Related parts for MRF10031

MRF10031 Summary of contents

Page 1

... These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case measured @ 23% duty cycle) REV 6 1 Order this document by MRF10031 (PEAK) 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 376B–02, STYLE 1 ...

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MRF10031 Tyco Electronics, MRF10031 Datasheet

MRF10031

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MRF10031 Summary of contents

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