MRF1000MB Tyco Electronics, MRF1000MB Datasheet

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MRF1000MB

Manufacturer Part Number
MRF1000MB
Description
Manufacturer
Tyco Electronics
Datasheet
1.MRF1000MB.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MRF1000MB
Manufacturer:
M/A-COM
Quantity:
5 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MRF1000MB
Manufacturer:
MA/COM
Quantity:
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SEMICONDUCTOR TECHNICAL DATA
The RF Line
low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.
Replaces MRF1000MA/D
1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Thermal Resistance, Junction to Case (2)
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Designed for Class A and AB common emitter amplifier applications in the
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Derate above 25 C
(I
(I
(I
(I
(V
(I
C
C
C
E
C
Output Power = 0.2 Watt
Minimum Gain = 10 dB
CB
= 5.0 mAdc, I
= 5.0 mAdc, V
= 5.0 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, V
= 20 Vdc, I
Rating
E
B
E
C
BE
= 0)
CE
= 0)
= 0)
= 0)
= 0)
= 5.0 Vdc)
Characteristic
Characteristic
C
= 25 C (1)
(T
C
= 25 C unless otherwise noted.)
Symbol
V
V
V
T
P
CEO
CBO
EBO
I
stg
C
D
–65 to +150
Value
200
3.5
7.0
20
50
40
V
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
I
CBO
h
mW/ C
FE
mAdc
Watts
Unit
Vdc
Vdc
Vdc
C
Symbol
R
JC
Min
3.5
20
50
50
10
—
CASE 332A–03, STYLE 2
Typ
—
—
—
—
—
—
MICROWAVE POWER
Max
0.7 W, 960–1215 MHz
25
TRANSISTORS
NPN SILICON
CLASS A/AB
Max
100
0.5
Order this document
—
—
—
—
by MRF1000MB/D
Unit
C/W
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
—

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MRF1000MB Summary of contents

Page 1

... Symbol Min V 20 (BR)CEO V 50 (BR)CES V 50 (BR)CBO V 3.5 (BR)EBO I — CBO Order this document by MRF1000MB/D 0.7 W, 960–1215 MHz CLASS A/AB MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332A–03, STYLE 2 Max Unit 25 C/W Typ Max Unit — — Vdc — — Vdc — ...

Page 2

ELECTRICAL CHARACTERISTICS — continued Characteristic DYNAMIC CHARACTERISTICS Output Capacitance ( Vdc 1.0 MHz FUNCTIONAL TESTS Common–Emitter Power Gain — Class Vdc 100 mAdc ...

Page 3

Figure 2. Output Power versus Input Power Figure 4. DC Safe Operating Area Figure 6. Common–Emitter S–Parameters and Series Equivalent Input/Output Impedances Replaces MRF1000MA/D 3 Figure 3. Output Power versus Frequency Figure 5. Power Gain versus Frequency SERIES EQUIVALENT IMPEDANCES ...

Page 4

Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets ...

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