MCL4448 Micro Commercial Components, MCL4448 Datasheet

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MCL4448

Manufacturer Part Number
MCL4448
Description
Manufacturer
Micro Commercial Components
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCL4448
Manufacturer:
ST/先科
Quantity:
20 000
Company:
Part Number:
MCL4448-TR
Quantity:
70 000
Revision: 4
Micro Commercial Components
Electrical Characteristics @ 25
1) Valid provided that leads at a distance of 8mm from case are kept
at ambient temperature(DO-35)
Features
Maximum Ratings
M C C
Reverse Voltage
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction Temperature
Surge Forward
Current
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Minimum Reverse
Breakdown Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
Instantaneous
Forward Voltage
Silicon epitaxial planar diode
Fast Switching diodes
500mW power dissipation
This diode is also available in the DO-35 case with the type
designation 1N4448, in the Minimelf case with the type designation
DL4448
Operating Temperature: -55
Storage Temperature: -55
Maximum Thermal Resistance; 350K/W Junction To Ambient
V
P
V
I
www.mccsemi.com
V
I
FSM
(BR)R
C
T
T
I
AV
TOT
V
RM
R
O
rr
R
J
J
TM
F
C to +150
O
C to +150
O
C Unless Otherwise Specified
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
1.0V(MAX)
0.62-0.72V
500mW
150mA
500mA
150
5.0uA
4.0nS
4.0pF
100V
25nA
100V
50uA
75V
O
C
O
O
C
C
1)
I
I
Resistive Load
f > 50Hz
T
t<1S, T
FM
T
V
V
Tested with
100uA puse
Measured at
V
I
V
R
FM
F
A
J
=10mA,
R
R
R
R
L
=25
=25
=100OHMS
= 5.0mA
=75V,
=20V T
=V
= 100mA;
= 6.0V
F
O
O
=0V
C, V
C
J
=25
J
=150
R
O
=20V
C
O
C
Silicon Epitaxial Diode
DIM
C
A
B
500mW 100 Volt
INCHES
MIN
.071
.004
.047
MICROMELF
MCL4448
SUGGESTED SOLDER
A
MAX
.079
.008
.051
PAD LAYOUT
0.055”
DIMENSIONS
0.039
MIN
1.20
1.8
.10
B
MM
Cathode Mark
MAX
1.30
2.0
.20
0.030”
C
2004/06/21
NOTE

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MCL4448 Summary of contents

Page 1

... V =20V T =150 Tested with 100V 100uA puse Measured at 4.0pF =10mA, F 4.0nS =100OHMS L MCL4448 500mW 100 Volt Silicon Epitaxial Diode MICROMELF Cathode Mark DIMENSIONS INCHES MM DIM MIN MAX MIN MAX A .071 .079 1.8 2.0 B .004 .008 .10 .20 C ...

Page 2

... MCL4448 Figure 1 Typical Forward Characteristics 200 100 MilliAmps 1.0 Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance www.mccsemi.com Revision: 4 Figure 2 Forward Derating Curve ...

Page 3

... MCL4448 Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 NanoAmps 100 T J Instantaneous Reverse Leakage Current - NanoAmperes versus Junction Temperature - C www.mccsemi.com Revision: 4 Figure 5 Peak Forward Surge Current 600 500 400 300 MilliAmps ...

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