Am29DL400BT-90EC Advanced Micro Devices, Am29DL400BT-90EC Datasheet
Am29DL400BT-90EC
Related parts for Am29DL400BT-90EC
Am29DL400BT-90EC Summary of contents
Page 1
Am29DL400B Data Sheet Continuity of Specifications Continuity of Ordering Part Numbers For More Information Qˆiyvph‡v‚ÃIˆ€ir… à ! %% @ ! à Sr‰v†v‚ à 6€rq€r‡ à à D††ˆrÃ9h‡r à I‚‰r€ir…Ã! Ã! ...
Page 2
Am29DL400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other ...
Page 3
GENERAL DESCRIPTION The Am29DL400B Mbit, 3.0 volt-only flash memory device, organized as 262,144 words or 524,288 bytes. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide (x16) data ap- pears on DQ0–DQ15; the ...
Page 4
... Simultaneous Read/Write Operations with Zero Latency ....... 10 Standby Mode ........................................................................ 10 Automatic Sleep Mode ........................................................... 10 RESET#: Hardware Reset Pin ............................................... 10 Output Disable Mode .............................................................. 11 Table 2. Am29DL400BT Top Boot Sector Architecture ..................11 Table 3. Am29DL400BB Bottom Boot Sector Architecture .............12 Autoselect Mode ..................................................................... 12 Table 4. Am29DL400B Autoselect Codes (High Voltage Method) ..13 Sector Protection/Unprotection ............................................... 13 Temporary Sector Unprotect ...
Page 5
PRODUCT SELECTOR GUIDE Family Part Number Speed Options (Full Voltage Range: V Max Access Time (ns) CE# Access (ns) OE# Access (ns) Note: See “AC Characteristics” for full specifications. BLOCK DIAGRAM A0–A17 RY/BY# A0–A17 STATE RESET# ...
Page 6
CONNECTION DIAGRAMS A15 1 A14 2 A13 3 A12 4 A11 5 A10 WE# 11 RESET RY/BY A17 ...
Page 7
CONNECTION DIAGRAMS RY/BY# NC A17 CE OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 ...
Page 8
PIN DESCRIPTION A0-A17 = 18 Addresses DQ0-DQ14 = 15 Data Inputs/Outputs DQ15/A-1 = DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) CE# = Chip Enable OE# = Output Enable WE# = Write Enable BYTE# = Selects 8-bit ...
Page 9
... Am29DL400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) 3.0 Volt-only Read, Program, and Erase Valid Combinations AM29DL400BT-70 EC, EI, FC, FI, AM29DL400BB-70 AM29DL400BT-80 AM29DL400BB-80 EC, EI, EE, AM29DL400BT-90 FC, FI, FE, AM29DL400BB-90 SC, SI, SE AM29DL400BT-120 AM29DL400BB-120 8 TEMPERATURE RANGE (0°C to +70° Commercial I = Industrial (– + Extended (– +125 C) ...
Page 10
DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory location. The register is a latch ...
Page 11
WE# and CE and OE For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte ...
Page 12
... Note: The address range is A17:A byte mode (BYTE Output Disable Mode after the RH When the OE# input disabled. The output pins are placed in the high imped- ance state. Am29DL400BT Top Boot Sector Architecture Sector Size (Kbytes/ A14 A13 A12 Kwords) ...
Page 13
Table 3. Sector Address Bank Address Bank Sector A17 A16 A15 SA13 SA12 SA11 Bank 2 SA10 SA9 SA8 SA7 0 0 ...
Page 14
Table 4. Am29DL400B Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29DL400B Byte L (Top Boot Block) Device ID: Word L Am29DL400B Byte L (Bottom Boot Block) Sector Protection Verification L Note: ...
Page 15
START PLSCNT = 1 RESET Wait First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector address with ...
Page 16
Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 5 for com- mand definitions). In addition, the following hardware data protection measures prevent accidental erasure or ...
Page 17
Table 5 shows the address and data requirements. This method is an alternative to that shown in Table 4, which is intended for PROM programmers and requires V on address pin ...
Page 18
Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Increment Address Last Address? Programming Completed Note: See Table 5 for program command sequence. Figure 3. Program Operation Chip Erase Command Sequence Chip erase ...
Page 19
If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 4 illustrates the algorithm for the erase opera- tion. Refer ...
Page 20
Command Definitions Table 5. Am29DL400B Command Definitions Command Sequence (Note 1) Addr Data Addr Data Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 ...
Page 21
WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation in the bank where a program or erase operation is in progress: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the ...
Page 22
RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...
Page 23
The remaining scenario is that the system initially de- termines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, de- termining the ...
Page 24
Status Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Erase Suspended Sector Erase-Suspend- Erase Read Suspend Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing ...
Page 25
ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +150 C Ambient Temperature with Power Applied ...
Page 26
DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current LO V Active Read Current CC I CC1 (Notes Active Write Current CC I ...
Page 27
DC CHARACTERISTICS Zero-Power Flash 500 1000 Note: Addresses are switching at 1 MHz Figure 9. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 ...
Page 28
TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalent Figure 11. Test Setup Key to Switching Waveforms WAVEFORM Don’t Care, Any Change Permitted 3.0 V 1.5 V Input 0.0 V Figure 12. Input Waveforms ...
Page 29
AC CHARACTERISTICS Read-Only Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...
Page 30
AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded Algorithms) t Ready to Read Mode (See Note) RESET# Pin Low (NOT During Embedded t Ready Algorithms) to Read Mode (See Note) t RESET# Pulse Width ...
Page 31
AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...
Page 32
AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL AS t Address Setup Time to OE# low during toggle bit polling ASO t t ...
Page 33
AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY VCS Notes program address program data Illustration shows device in word ...
Page 34
AC CHARACTERISTICS t WC Valid PA Addresses t AH CE# OE WE# t WPH t DS Valid Data In WE# Controlled Write Cycle Figure 19. Back-to-Back Read/Write Cycle Timings t RC Addresses VA t ACC t CE CE# ...
Page 35
AC CHARACTERISTICS Addresses CE# t OEH WE# OE Valid Data DQ6/DQ2 RY/BY# Note Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read ...
Page 36
AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std Description t V Rise and Fall Time (See Note) VIDR ID RESET# Setup Time for Temporary Sector t RSP Unprotect RESET# Hold Time from RY/BY# High for t RRB Temporary Sector Unprotect ...
Page 37
AC CHARACTERISTICS RESET# SA, A6, A1, A0 Sector Protect/Unprotect Data 60h 1 µs CE# WE# OE# * For sector protect For sector unprotect ...
Page 38
AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time ELAX Data Setup Time DVEH ...
Page 39
AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation ...
Page 40
ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Program Time Word Program Time Byte Mode Chip Program Time (Note 3) Word Mode Notes: 1. Typical program and erase times assume the following conditions 3.0 ...
Page 41
PHYSICAL DIMENSIONS* TS 048—48-Pin Standard TSOP * For reference only. BSC is an ANSI standard for Basic Space Centering 40 Am29DL400B Dwg rev AA; 10/99 ...
Page 42
PHYSICAL DIMENSIONS (continued) TSR048—48-Pin Reverse TSOP * For reference only. BSC is an ANSI standard for Basic Space Centering. Am29DL400B Dwg rev AA; 10/99 41 ...
Page 43
PHYSICAL DIMENSIONS (continued) SO 044—44-Pin Small Outline 42 Am29DL400B Dwg rev AC; 10/99 ...
Page 44
... Trademarks Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...