AD22151 Analog Devices, AD22151 Datasheet
AD22151
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AD22151 Summary of contents
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... Industrial Absolute Position Sensing Proximity Sensing GENERAL DESCRIPTION The AD22151 is a linear magnetic field transducer. The sensor output is a voltage proportional to a magnetic field applied perpendicularly to the package top surface. The sensor combines integrated bulk Hall cell technology and instrumentation circuitry to minimize temperature related drifts associated with silicon Hall cell characteristics ...
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... ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD22151 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality ...
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... POSITIVE B FIELD INTO TOP OF PACKAGE RESULTS IN A POSITIVE VOLTAGE RESPONSE CIRCUIT OPERATION The AD22151 consists of epi Hall plate structures located at the center of the die. The Hall plates are orthogonally sampled by commutation switches via a differential amplifier. The two amplified Hall signals are synchronously demodulated to pro- vide a resultant offset cancellation (see Figure 3) ...
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... Figure 8. Gain Variation (from +25 C) vs. Temperature (–2000 ppm Field TEMPERATURE COMPENSATION The AD22151 incorporates a “thermistor” transducer that detects relative chip temperature within the package. This function provides a compensation mechanism for the various temperature dependencies of the Hall cell and magnet combina- tions. The temperature information is accessible at Pins 1 and 2 ( +2900 ppm / C) and Pin 3 ( – ...
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... Figure 11. Typical Resistor Value R1 (Pins 2 and 3) vs. 150 ppm. Drift Compensation GAIN AND OFFSET The operation of the AD22151 can be bipolar (i.e., 0 Gauss = V / ratiometric offset can be implemented to Position CC Zero Gauss point at some other potential (i.e., 0.25 V). The gain of the sensor can be set by the appropriate R2 and R3 ...
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... AD22151 Knowing the values of R3 and R4 from above, and noting Equa- tion 2, the parallel combination of R2 and R4 required is 6.071 k 15 –1 Thus – 6.071 k 141.666 k NOISE The principle noise component in the sensor is thermal noise from the Hall cell. Clock feedthrough into the output signal is largely suppressed with application of a supply bypass capacitor ...
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... FIELD – Gauss Figure 15. Integral Nonlinearity vs. Field REV. 0 2.496 2.494 2.492 2.490 2.488 2.486 2.484 200 400 600 140 Figure 16. Absolute Offset Volts vs. Temperature –7– AD22151 GAIN = 3.78mV/G 120 100 –20 TEMPERATURE – C –40 ...
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... AD22151 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead SOIC (SO-8) 0.1968 (5.00) 0.1890 (4.80 0.1574 (4.00) 0.2440 (6.20 0.1497 (3.80) 0.2284 (5.80) PIN 1 0.0688 (1.75) 0.0196 (0.50) 0.0098 (0.25) 0.0532 (1.35) 0.0099 (0.25) 0.0040 (0.10) 8 0.0500 0.0192 (0.49) 0 SEATING 0.0098 (0.25) 0.0500 (1.27) (1.27) 0.0138 (0.35) PLANE BSC 0.0075 (0.19) 0.0160 (0.41) –8– REV. 0 ...