5STP33L2800 ABB, 5STP33L2800 Datasheet

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5STP33L2800

Manufacturer Part Number
5STP33L2800
Description
Manufacturer
ABB
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
5STP33L2800
Manufacturer:
ABB
Quantity:
120
Part Number:
5STP33L2800
Quantity:
125
• • • • Patented free-floating silicon technology
• • • • Low on-state and switching losses
• • • • Designed for traction, energy and industrial applications
• • • • Optimum power handling capability
• • • • Interdigitated amplifying gate
Blocking
Maximum rated values
Characteristic values
Mechanical data
Maximum rated values
Characteristic values
1)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Symbol
V
V
dV/dt
Parameter
Forwarde leakage current
Reverse leakage current
Parameter
Mounting force
Acceleration
Acceleration
Parameter
Weight
Surface creepage distance
Air strike distance
V
I
I
I
V
r
TAVM
TRMS
TSM
DRM,
RSM1
T
Maximum Ratings are those values beyond which damage to the device may occur
DSM
T0
crit
V
RRM
=
=
=
=
=
=
Conditions
f = 50 Hz, t
t
Exp. to 0.67 x V
p
= 5ms, single pulse
60000 A
2800 V
3740 A
5880 A
0.95 V
0.1 mΩ Ω Ω Ω
1)
1)
p
= 10ms
DRM
, T
j
= 125°C
Phase Control Thyristor
Symbol Conditions
I
I
Symbol Conditions
F
a
a
Symbol Conditions
m
D
D
DRM
RRM
M
S
a
V
V
Device unclamped
Device clamped
DRM
RRM
5STP 33L2800
, Tj = 125°C
, Tj = 125°C
5STP 33L2800
2800 V
3000 V
min
min
min
5STP 33L2600
63
36
15
1000 V/µs
2600 V
2800 V
typ
typ
typ
1.45
70
Doc. No. 5SYA1011-03 Jan. 02
max
max
max
5STP 33L2200
400
400
100
84
50
2200 V
2400 V
Unit
Unit
Unit
m/s
m/s
mm
mm
mA
mA
kN
kg
2
2

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5STP33L2800 Summary of contents

Page 1

... Parameter Weight Surface creepage distance Air strike distance 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Phase Control Thyristor 5STP 33L2800 5STP 33L2800 2800 V 3000 V = 125°C ...

Page 2

... Characteristic values Parameter Symbol Conditions Recovery charge Q rr Delay time t d ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Jan. 02 Half sine wave 70° ms 125° 8.3 ms 125°C, ...

Page 3

... R (1 thJC (K/kW) 4.7 0.853 i τ 0.4787 0.0824 (s) i ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Jan. 02 For DC gate current T = 25° 25° 0 125°C D DRM vjmax 125°C ...

Page 4

... A B 7.3117e-1 7.9000e-5 1.7903e-2 Fig. 2 On-state characteristics. T =125°C, 10ms half sine j Fig. 4 On-state power dissipation vs. mean on- state current. Turn - on losses excluded. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Jan ⋅ 2.3140e-3 Fig. 3 On-state characteristics. ...

Page 5

... GM p Fig. 8 Recommendet gate current waveform. Fig. 10 Recovery charge vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Jan. 02 Fig. 7 Surge on-state current vs. number of pulses. I ≈ 2.. ≥ 1 Gon GT ≥ 2 A/µs ...

Page 6

... Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1011-03 Jan. 02 ...

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