2SK3150 Renesas Electronics Corporation., 2SK3150 Datasheet

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2SK3150

Manufacturer Part Number
2SK3150
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3150L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK3150S
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK3150STL-E
Manufacturer:
SPANSION
Quantity:
4 520

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2SK3150 Summary of contents

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Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...

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... Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance R =45m typ. DS High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK Gate 2. Drain 3. Source 4. Drain S ADE-208-750B (Z) 3rd. Edition Mar. 2001 ...

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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

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... DF — 90 — 2SK3150(L),2SK3150(S) Unit Test Conditions 10mA 100 16V 100 1mA ...

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... Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 3 Drain to Source Voltage 500 100 Operation in this area is 0.3 limited °C 0.05 0.5 150 200 Drain to Source Voltage Tc (° ...

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... 100 5, – 120 Case Temperature T c 2SK3150(L),2SK3150(S) Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 (V) Drain Current Forward Transfer Admittance vs –25 °C ...

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... Body–Drain Diode Reverse Recovery Time 500 200 100 0.1 0.3 Reverse Drain Current Dynamic Input Characteristics 200 100 V DD 160 120 100 Gate Charge ...

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... V (V) Channel Temperature Tch (° Monitor 2SK3150(L),2SK3150( duty < 0 > 100 125 150 Avalanche Waveform V DSS 2 • L • I • – V DSS DD V (BR)DSS V DS ...

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... Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin – c( (t) • ch – 2.5 °C/ ° 100 m Pulse Width PW (S) Vout Monitor R L 10% Vin V DD ...

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... Package Dimensions 10.2 1.2 0.2 2.54 0.5 4.44 0.3 1.3 2.59 1.27 0.2 + 0.2 0.86 – 0.1 0.76 0.1 2.54 0.5 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 2SK3150(L),2SK3150( January, 2001 Unit: mm 0.2 0.15 0.2 LDPAK (L) — — 1.4 g ...

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... Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm 7.8 6.6 2.2 LDPAK (S)-(1) — — 1.3 g ...

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... Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm 7.8 6.6 2.2 LDPAK (S)-(2) — — 1.35 g ...

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... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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