2SK2973 MITSUBISHI, 2SK2973 Datasheet
2SK2973
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2SK2973 Summary of contents
Page 1
... DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES • High power gain:Gpe 13dB @V =9.6V,f=450MHz,Pin=17dBm DD • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets ...
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... R1 R2 CR10-103 CR10-101 10000 100 C6 GR40-102 1000pF GR40-10 GR40-102 10pF 1000pF 22 µF 50V V GG MITSUBISHI RF POWER MOS FET 2SK2973 I VS 1.2 V =9. =25˚C C 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4 add ...
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... MITSUBISHI RF POWER MOS FET 2SK2973 V =7V 155.450 0.517 -33.518 134.869 0.497 -60.987 119.517 0.482 -80.439 107.569 0.475 -94.398 97.989 ...